The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si-based RF bipolar transistors

2006 ◽  
Vol 3 (3) ◽  
pp. 494-498 ◽  
Author(s):  
Christian Schippel ◽  
Jun Fu ◽  
Frank Schwierz
Keyword(s):  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Bipolar Transistors ◽  
Dopant Profile

A doping concentration-dependent upper limit of the breakdown voltage–cutoff frequency product in Si bipolar transistors

2004 ◽  
Vol 48 (2) ◽  
pp. 339-343 ◽  
Author(s):  
Jae-Sung Rieh ◽  
Basanth Jagannathan ◽  
David Greenberg ◽  
Greg Freeman ◽  
Seshadri Subbanna
Keyword(s):  
Breakdown Voltage ◽  
Doping Concentration ◽  
Cutoff Frequency ◽  
Bipolar Transistors ◽  
Upper Limit

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

scholarly journals Sensorless Control of Voltage Peaks in Class-E Single-Ended Resonant Inverter for Induction Heating Rice Cooker

Energies ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4545
Author(s):  
Yongseung Oh ◽  
Jaeeul Yeon ◽  
Jayoon Kang ◽  
Ilya Galkin ◽  
Wonsoek Oh ◽  
...  
Keyword(s):  
High Pressure ◽  
Breakdown Voltage ◽  
Induction Heating ◽  
Control Method ◽  
Supply Voltage ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Voltage Fluctuations ◽  
Resonant Inverter ◽  
Do So

Single-ended (SE) resonant inverters are widely used as power converters for high-pressure rice cooker induction, with 1200 V insulated-gate bipolar transistors (IGBTs) being used as switching devices for kW-class products. When voltage fluctuations occur at the input stage of an SE resonant inverter, the resonant voltage applied to the IGBT can be directly affected, potentially exceeding the breakdown voltage of the IGBT, resulting in its failure. Consequently, the resonant voltage should be limited to below a safety threshold—hardware resonant voltage limiting methods are generally used to do so. This paper proposes a sensorless resonant voltage control method that limits the increase in the resonant voltage caused by overvoltage or supply voltage fluctuations. By calculating and predicting the resonance voltage through the analysis of the resonance circuit, the resonance voltage is controlled not to exceed the breakdown voltage of the IGBT. The experimental results of a 1.35 kW SE resonant inverter for a high-pressure induction heating rice cooker were used to verify the validity of the proposed sensorless resonant voltage limiting method.

Improved compact modeling of output conductance and cutoff frequency of bipolar transistors

2001 ◽  
Vol 36 (9) ◽  
pp. 1390-1398 ◽  
Author(s):  
J.C.J. Paasschens ◽  
W.J. Kloosterman ◽  
R.J. Havens ◽  
H.C. de Graaff
Keyword(s):  
Cutoff Frequency ◽  
Bipolar Transistors ◽  
Compact Modeling ◽  
Output Conductance

scholarly journals Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 437-442
Author(s):  
T. Okada ◽  
K. Horio
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Energy Transport ◽  
Transport Model ◽  
Cutoff Frequency ◽  
Bipolar Transistors ◽  
Electron Velocity ◽  
Collector Current ◽  
Double Peak ◽  
Double Peaks ◽  
Energy Profiles

By using an energy transport model, we simulate cutoff frequency fT  versus collector current density IC characteristics of npn−n AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with various n−-collector thickness and n−-doping densities. It is found that the calculated fT  characteristics show double peak behavior when the n−- layer is thick enough and the n−-doping is high enough to allow existence of neutral n−- region. The mechanism of the double peak behavior is discussed by studying energy band diagrams, electron-energy profiles and electron-velocity profiles. Particularly, we discuss the origin of the second peak (at higher IC) which is not usually reported experimentally.

A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

2016 ◽  
Vol 25 (12) ◽  
pp. 124401 ◽  
Author(s):  
Qiang Fu ◽  
Wan-Rong Zhang ◽  
Dong-Yue Jin ◽  
Yan-Xiao Zhao ◽  
Xiao Wang
Keyword(s):  
Thermal Stability ◽  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Sige Hbt ◽  
Thermal Stability Of

Formation of p+ and High Resistivity Regions in GaAs-AIGaAs Heterojunctions

1987 ◽  
Vol 92 ◽  
Author(s):  
S. J. Pearton ◽  
J. M. Brown ◽  
K. T. Short
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Annealing Temperature ◽  
Bipolar Transistors ◽  
High Resistivity ◽  
Dopant Profile

ABSTRACTThe formation of p+ and high resistivity layers in GaAs-AIGaAs heterostructures is useful in a number of applications, including the fabrication of heterojunction bipolar transistors (HBTs). Control of the implanted dopant profile during annealing is paramount for rapidly diffusing acceptor species such as Be and Mg, and we show SIMS data of the dopant profile in implanted heterojunctions as a function of annealing temperature in the range 700–900°C for 1–5 sec. Annealing of implanted Be at ≥800°C even at a dose of 2×10l5cm−2 results in complete activation whereas Mg shows only 30% activation under these conditions. There is no significant interface disordering visible by TEM or RBS for either case. Multiple energy O implants (up to and including 1 MeV) were used to render the entire heterostructure resistive; for doses of ∼1013cm−2, the O bombarded layers showed resistivities of 108 Ω/□ after 525°C annealing.

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