Reduction of the internal electric field in GaN/AlN quantum dots grown on thea -plane of SiC substrates

2005 ◽  
Vol 2 (11) ◽  
pp. 3851-3855
Author(s):  
N. Garro ◽  
A. Cros ◽  
J. A. Budagosky ◽  
A. Cantarero ◽  
A. Vinattieri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Internal Electric Field

Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown ona-plane 6H-SiC

2006 ◽  
Vol 243 (7) ◽  
pp. 1499-1507 ◽  
Author(s):  
A. Cros ◽  
J. A. Budagosky ◽  
A. García-Cristóbal ◽  
N. Garro ◽  
A. Cantarero ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Internal Electric Field

scholarly journals Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots

2005 ◽  
Vol 87 (1) ◽  
pp. 011101 ◽  
Author(s):  
N. Garro ◽  
A. Cros ◽  
J. A. Budagosky ◽  
A. Cantarero ◽  
A. Vinattieri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Internal Electric Field ◽  
Self Assembled

Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires

2011 ◽  
Vol 99 (14) ◽  
pp. 141914 ◽  
Author(s):  
R. Songmuang ◽  
D. Kalita ◽  
P. Sinha ◽  
M. den Hertog ◽  
R. André ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Internal Electric Field ◽  
Strong Suppression

scholarly journals Quantum Confined Stark effect and temperature dependencies of photoluminescence of InAs quantum dots coupled with AlGaAs/GaAs two dimensional electron gas -=SUP=-*-=/SUP=-

2019 ◽  
Vol 53 (4) ◽  
pp. 500
Author(s):  
H. Khmissi ◽  
A.M. El Sayed
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Stark Effect ◽  
Electron Gas ◽  
Internal Electric Field ◽  
Dimensional Electron ◽  
Inas Quantum Dots ◽  
Hetero Structure ◽  
Quantum Confined Stark Effect ◽  
Dimensional Electron Gas

AbstractIn this work, Experimental study of the influence of internal electric field and the temperature on the photoluminescence of InAs self assembled quantum dots inserted in AlGaAs/GaAs modulation doped hetero-structure have been investigated. The internal electric field is controlled by an appropriate design of the hetero-structure. We have observed a red shift of the photoluminescence position peaks result from the quantum confined Stark effect due to the local electric field existing in the structure. Estimation values of the internal electric field have been obtained through carrier’s densities values in interface of AlGaAs/GaAs hetero-junction. An anomalous dependence of the full width at half maximum with temperature has been found, which attributed to the carrier’s dynamics between InAs quantum dots layer and the two-dimensional electron gas.

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