Focused ion beam fabrication and properties of nanoscale Josephson junctions for sensors and other applications

2005 ◽  
Vol 2 (5) ◽  
pp. 1455-1462 ◽  
Author(s):  
M. G. Blamire ◽  
C. Bell ◽  
G. Burnell ◽  
D.-J. Kang ◽  
A. Ruotolo ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam

PLANAR JOSEPHSON JUNCTIONS FABRICATED BY FOCUSED-ION BEAM

2001 ◽  
Vol 15 (24n25) ◽  
pp. 3359-3360 ◽  
Author(s):  
Hye-Won Seo ◽  
Quark Y. Chen ◽  
Chong Wang ◽  
Wei-Kan Chu ◽  
T. M. Chuang ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Spot Size ◽  
Physical Significance ◽  
Fabrication Technique ◽  
Beam Spot ◽  
Beam Spot Size ◽  
Current Voltage

We have fabricated nano-scaled planar superconductor-insulator-superconductor Josephson junctions using focused ion beam (FIB) with beam spot size ~5 nm . To study the effectiveness of this fabrication technique and for the purpose of comparisons, a variety of samples have been made based on high temperature superconducting (HTS) YBa2Cu3O7-δ electrodes. The insulators are either vacuum or silicon dioxide. The samples showed current-voltage (IV) characteristics typical of a resistively shunted junction (RSJ). We will discuss various aspects of the processing methods and the physical significance of the junction characteristics.

Fabrication of high Ic×Rn YBCO-Josephson-junctions on MgO- substrates using a focused-ion-beam system

1993 ◽  
Vol 210 (1-2) ◽  
pp. 138-146 ◽  
Author(s):  
Ch. Neumann ◽  
K. Yamaguchi ◽  
K. Hayashi ◽  
K. Suzuki ◽  
Y. Enomoto ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam System

Josephson junctions fabricated by focused ion beam from ex situ grown MgB2 thin films

2004 ◽  
Vol 405 (1) ◽  
pp. 84-88 ◽  
Author(s):  
A Malisa ◽  
M Valkeapää ◽  
L.-G Johansson ◽  
Zdravko Ivanov
Keyword(s):  
Thin Films ◽  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ex Situ ◽  
Mgb2 Thin Films

FABRICATION OF JOSEPHSON JUNCTIONS ON MgB2 THIN FILMS USING FOCUSED-ION-BEAM (FIB)

2005 ◽  
Vol 19 (01n03) ◽  
pp. 391-394
Author(s):  
SANG-JAE KIM ◽  
GUI-SIK KIM ◽  
YOSHIHIKO TAKANO ◽  
SHUNICHI ARISAWA ◽  
KYUNG-SUNG YUN ◽  
...  
Keyword(s):  
Thin Films ◽  
Josephson Junctions ◽  
Josephson Effect ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Voltage Frequency ◽  
Mgb2 Thin Films

We fabricated nano-bridges on MgB 2 thin films so as to demonstrate Josephson effect. Those bridges smaller than 200 nm widths show the resistively-shunted-junction (RSJ)-like current (I)-voltage (V) curves with hysteresis. We also observed a few of microwave-induced steps that correspond to the Josephson voltage-frequency relations at 33 K.

Fabrication of YBaCuO-Josephson-Junctions on MgO-Substrates Damaged by a Focused Ion Beam Prior to Film Deposition

1993 ◽  
Vol 32 (Part 2, No. 5B) ◽  
pp. L727-L729 ◽  
Author(s):  
Christian Neumann ◽  
Katsumi Suzuki ◽  
Youichi Enomoto ◽  
Shoji Tanaka
Keyword(s):  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Film Deposition

CRITICAL CURRENT DEPENDENCE OF STACKED JOSEPHSON JUNCTIONS DC SQUID IN Bi2Sr2CaCu2O8+Δ

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3270-3273 ◽  
Author(s):  
SANG-JAE KIM
Keyword(s):  
Magnetic Fields ◽  
Critical Current ◽  
Josephson Junctions ◽  
Quantum Interference ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Periodic Modulation ◽  
Superconducting Quantum Interference Device ◽  
Current Dependence ◽  
Loop Area

We investigate critical current (Ic) modulation of stacked Josephson junctions (SJJs) dc superconducting quantum interference device ( dc SQUID) on a Bi 2 Sr 2 CaCu 2 O 8+δ ( Bi -2212) whisker. A coupled SJJs with a completely perforated hole of 0.1 μ m × 0.2 μ m were fabricated by using a 3-D focused-ion-beam (FIB) etching method. Those dc SQUIDs exhibited uniform multi-branch structures and clearly oscillated critical current under external magnetic fields (He). With applying He, the clear periodic modulation patterns of Ic are obtained and well fitted to the calculated value from the loop area of 0.02 μm2.

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