MOCVD growth of group III nitrides for high power, high frequency applications

2005 ◽  
Vol 2 (3) ◽  
pp. 947-955 ◽  
Author(s):  
M.-A. di Forte Poisson ◽  
M. Magis ◽  
M. Tordjman ◽  
N. Sarazin ◽  
J. di Persio
Keyword(s):  
High Power ◽  
High Frequency ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Mocvd Growth

MOCVD Growth of Group III Nitrides for High-power, High-frequency Applications

2005 ◽  
pp. 69-94
Author(s):  
M.A. di Forte-Poisson ◽  
M. Magis ◽  
M. Tordjmann ◽  
J. di Persio
Keyword(s):  
High Power ◽  
High Frequency ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Mocvd Growth

Exafs Studies of Group III-Nitrides

1998 ◽  
Vol 512 ◽  
Author(s):  
N J Jeffs ◽  
A V Blant ◽  
T S Cheng ◽  
C T Foxon ◽  
C Bailey ◽  
...  
Keyword(s):  
Phase Separation ◽  
High Frequency ◽  
Group Iii Nitrides ◽  
Total Electron Yield ◽  
Interatomic Distances ◽  
Total Electron ◽  
Group Iii ◽  
Bond Lengths ◽  
Group Iii Nitride ◽  
Comprehensive Study

ABSTRACTThe group III nitrides have important applications for blue/green LEDs, blue/UV laser diodes and for high-power high frequency FETs. In all such devices the alloys play an important role either in the active part of the structure or in the cladding regions. The properties of the group III-nitride alloys are not at present well understood and in particular there are indications that phase separation can occur. We have undertaken a comprehensive study of (InGa)N alloys using EXAFS in order to study such problems.We have demonstrated recently that REFLEXAFS technique can be used to give interatomic distances for (InGa)N alloys using the In edge to measure the bond lengths as a function of In content over the complete range from InN to GaN. We have now extended this study by using the Total Electron Yield (TEY) EXAFS technique to study the bond lengths by using both the Ga and In edges for (InGa)N alloys. The TEY data for the (InGa)N alloy samples gives more reliable data for the In-In and In-Ga separations than the earlier REFLEXAFS studies. Data obtained for the In-Ga separation from the Ga and In edges agree well within experimental error.The data obtained from this study suggest that the (InGa)N samples grown at low temperature do not exhibit evidence for phase separation.

scholarly journals Force detection of high-frequency electron spin resonance near room temperature using high-power millimeter-wave source gyrotron

2021 ◽  
Vol 118 (2) ◽  
pp. 022407
Author(s):  
Hideyuki Takahashi ◽  
Yuya Ishikawa ◽  
Tsubasa Okamoto ◽  
Daiki Hachiya ◽  
Kazuki Dono ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Millimeter Wave ◽  
Electron Spin ◽  
High Power ◽  
High Frequency ◽  
Room Temperature ◽  
Force Detection ◽  
Wave Source ◽  
Spin Resonance ◽  
Millimeter Wave Source

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

1994 ◽  
Vol T54 ◽  
pp. 283-290 ◽  
Author(s):  
E Janzén ◽  
O Kordina ◽  
A Henry ◽  
W M Chen ◽  
N T Son ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
High Frequency ◽  
High Frequency Devices

scholarly journals Figures of merit in high-frequency and high-power GaN HEMTs

2009 ◽  
Vol 193 ◽  
pp. 012040 ◽  
Author(s):  
F A Marino ◽  
N Faralli ◽  
D K Ferry ◽  
S M Goodnick ◽  
M Saraniti
Keyword(s):  
High Power ◽  
High Frequency ◽  
Figures Of Merit ◽  
Gan Hemts
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