Luminescence of isoelectronic impurities and antisite defects in garnets

2005 ◽  
Vol 2 (1) ◽  
pp. 375-379 ◽  
Author(s):  
Y. Zorenko
Keyword(s):  
Antisite Defects ◽  
Isoelectronic Impurities

Antisite Defects in Yttrium Iron Garnet

1997 ◽  
Vol 07 (C1) ◽  
pp. C1-283-C1-286
Author(s):  
P. Novák ◽  
J. Englich ◽  
H. Stepánková ◽  
J. Kohout ◽  
H. Lütgemeier ◽  
...  
Keyword(s):  
Yttrium Iron Garnet ◽  
Yttrium Iron ◽  
Antisite Defects ◽  
Iron Garnet

scholarly journals Ultralow Thermal Conductivity in Diamond-Like Semiconductors: Selective Scattering of Phonons from Antisite Defects

2018 ◽  
Vol 30 (10) ◽  
pp. 3395-3409 ◽  
Author(s):  
Brenden R. Ortiz ◽  
Wanyue Peng ◽  
Lídia C. Gomes ◽  
Prashun Gorai ◽  
Taishan Zhu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Antisite Defects

Optical properties of GaSb(001)-c(2 × 6): The role of surface antisite defects

2010 ◽  
Vol 247 (8) ◽  
pp. 1960-1964 ◽  
Author(s):  
Conor Hogan ◽  
Rita Magri ◽  
Rodolfo Del Sole
Keyword(s):  
Optical Properties ◽  
Antisite Defects

Isoelectronic impurities in II-VI semiconductors: ZnTe doped with Ca, Sr, and Ba

1999 ◽  
Vol 59 (20) ◽  
pp. 12911-12916 ◽  
Author(s):  
M. J. Seong ◽  
I. Miotkowski ◽  
A. K. Ramdas
Keyword(s):  
Isoelectronic Impurities

Charge oscillations caused by isoelectronic impurities

1975 ◽  
Vol 72 (1) ◽  
pp. K5-K8
Author(s):  
R. Ferrer ◽  
M. Kiwi ◽  
M. J. Zuckermann
Keyword(s):  
Isoelectronic Impurities

Triple-Defect B2 Binary Intermetallics: Bragg-Williams Solution and Monte Carlo Simulations

2009 ◽  
Vol 289-292 ◽  
pp. 361-368 ◽  
Author(s):  
Andrzej Biborski ◽  
L. Zosiak ◽  
Rafal Abdank-Kozubski
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Vacancy Concentration ◽  
A Priori ◽  
Equilibrium Concentration ◽  
Pair Interaction ◽  
Type Model ◽  
Interaction Energies ◽  
Atomic Pair ◽  
Antisite Defects

Surprisingly low rate of “order-order” kinetics in stoichiometric NiAl intermetallic known of very high vacancy concentration suggested a specific triple-defect mechanism of ordering/disordering in this system [1]. This mechanism implies a correlation between the concentrations of antisite defects and vacancies; the latters being trapped in triple defects and thus, inactive as atomic migration agents. The process was modelled by means of Monte Carlo (MC) simulations recognised as a powerful tool for such tasks [2], but requiring now the implementation of thermal vacancy thermodynamics. Temperature dependence of vacancy concentration in an AB B2 binary system was determined within an Ising-type model solved first in Bragg-Williams approximation [3] and then by means of MC simulation of a Grandcanonical Ensemble. Without any a priori assumptions concerning the formation of particular types of point defects the model yielded temperature domains where the concentrations of antisite defects and vacancies were proportional. The effect associated with the formation of triple defects appeared for specific values of atomic pair-interaction energies. Moreover, non-stoichiometric A-B systems with the same atomic pair-interaction energies showed the existence of constitutional vacancies at low temperatures. Monte Carlo simulations of “order-order” (disordering) kinetics in B2 AB systems modelled with triple-defect-promoting atomic pair-interaction energies were run with temperature-dependent concentra-tion (i.e. number) of vacancies given by the above model. The simulated relaxations showed two stages: (i) rapid formation of triple defects engaging almost all vacancies present in the system, (ii) very slow process of further generation of antisite defects until the equilibrium concentration was reached. The result reproduced very well the experimental observations [1].

Sign in / Sign up

Export Citation Format

Share Document