Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement

2004 ◽  
Vol 1 (10) ◽  
pp. 2429-2432 ◽  
Author(s):  
Woong Joon Hwang ◽  
Tae Hee Lee ◽  
Lan Kim ◽  
Moo Whan Shin
Keyword(s):  
Thermal Resistance ◽  
Temperature Measurement ◽  
Junction Temperature

A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices

2002 ◽  
Vol 35 (6) ◽  
pp. 499-502
Author(s):  
Ban Leong Ooi ◽  
Bo Chen ◽  
Fujiang Lin ◽  
Pang Shyan Kooi ◽  
Chi So Hui
Keyword(s):  
Thermal Resistance ◽  
Practical Approach ◽  
Junction Temperature

Measurement of junction temperature and thermal resistance in InGaAlAs/AlGaAs quantum-well superluminescent diodes (SLDs)

2016 ◽  
Vol 30 (05) ◽  
pp. 1650046 ◽  
Author(s):  
Shuai Zhou ◽  
Jing Zhang ◽  
Li-Hua Duan ◽  
Zu-Rong Tang ◽  
Guang-Hua Deng
Keyword(s):  
Quantum Well ◽  
Thermal Resistance ◽  
Continuous Wave ◽  
Junction Temperature ◽  
Operation Condition ◽  
Forward Voltage ◽  
Single Quantum Well ◽  
Cw Operation ◽  
Superluminescent Diodes

This paper reports on the experimental method of the determination of junction temperature and thermal resistance in 840 nm InGaAlAs/AlGaAs compressive strained single quantum well (SQW) superluminescent diodes (SLDs). The linear relation between forward voltage and junction temperature clearly occurs by utilizing the forward voltage–temperature ([Formula: see text]–[Formula: see text]) method. The temperature coefficient [Formula: see text] has been determined. Under 100 mA continuous-wave (CW) operation condition, the thermal resistance is measured to be 81.6[Formula: see text]C/W, which is not significantly different with the theoretical calculation result.

A New Method of Determining the Thermal Resistance of Microelectronic Packages

2005 ◽  
Vol 2 (1) ◽  
pp. 84-97 ◽  
Author(s):  
King-Long Teoh ◽  
K.N. Seetharamu ◽  
Ahmad Yusoff Hassan
Keyword(s):  
Thermal Resistance ◽  
A Priori ◽  
Coefficient Of Performance ◽  
Junction Temperature ◽  
Element Simulation ◽  
Plastic Ball ◽  
Chip Carrier ◽  
Board Level ◽  
Critical Literature

A critical literature review on the determination of thermal resistance in a package is presented. Finite element simulation of three types of packages, namely, Leadless Chip Carrier (LCC), Bump Chip Carrier (BCC) and Plastic Ball Grid Array (PBGA) as representative of the packages used in the electronic industry, is carried out both at package level and board level separately. Based on the results obtained from 204 simulations, a new methodology of determining the junction temperature even in cases where the specification of the board is not known a priori is developed. The prediction of the junction temperature from the new methodology agrees well with the results of the package and the board simulated simultaneously. The junction temperature obtained by simulation agrees well with experimental data or literature value. A methodology is presented to transform the results for a JEDEC standard board to a non-JEDEC standard board. The coefficient of performance of a non-JEDEC standard board has been introduced and evaluated. The effect of junction temperature in a given package on the reliability has been investigated. Some cases where components failed due to temperature effect are presented.

Determination of Junction-to-Case Thermal Resistance from One Transient Cooling Curve

2019 ◽  
Vol 24 (1) ◽  
pp. 30-41
Author(s):  
Natalia L. Еvdokimova ◽  
◽  
Vladimir V. Dolgov ◽  
Kirill A. Ivanov ◽  
◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Cooling Curve

scholarly journals Influence of a Thermal Pad on Selected Parameters of Power LEDs

Energies ◽  
2020 ◽  
Vol 13 (14) ◽  
pp. 3732
Author(s):  
Krzysztof Górecki ◽  
Przemysław Ptak ◽  
Tomasz Torzewicz ◽  
Marcin Janicki
Keyword(s):  
Optical Properties ◽  
Thermal Resistance ◽  
Optical Power ◽  
Junction Temperature ◽  
Operating Parameters ◽  
Cold Plate ◽  
Optical Efficiency ◽  
Forward Current ◽  
Measurement Results ◽  
Set Up

This paper is devoted to the analysis of the influence of thermal pads on electric, optical, and thermal parameters of power LEDs. Measurements of parameters, such as thermal resistance, optical efficiency, and optical power, were performed for selected types of power LEDs operating with a thermal pad and without it at different values of the diode forward current and temperature of the cold plate. First, the measurement set-up used in the paper is described in detail. Then, the measurement results obtained for both considered manners of power LED assembly are compared. Some characteristics that illustrate the influence of forward current and temperature of the cold plate on electric, thermal, and optical properties of the tested devices are presented and discussed. It is shown that the use of the thermal pad makes it possible to achieve more advantageous values of operating parameters of the considered semiconductor devices at lower values of their junction temperature, which guarantees an increase in their lifetime.

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