High quality InAs quantum dots covered by InGaAs/GaAs hetero-capping layer

2003 ◽  
Vol 0 (3) ◽  
pp. 939-943 ◽  
Author(s):  
R. Ohtsubo ◽  
K. Yamaguchi
Keyword(s):  
Quantum Dots ◽  
High Quality ◽  
Inas Quantum Dots ◽  
Capping Layer

High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer

2009 ◽  
Vol 20 (30) ◽  
pp. 305301 ◽  
Author(s):  
Y Wang ◽  
J Zou ◽  
Z M Zhao ◽  
Z Hao ◽  
K L Wang
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
High Quality ◽  
Inas Quantum Dots ◽  
Gaas Buffer Layer

Ordering of high-quality InAs quantum dots on defect-free nanoholes

2006 ◽  
Vol 88 (7) ◽  
pp. 072107 ◽  
Author(s):  
Jong Su Kim ◽  
Mitsuo Kawabe ◽  
Nobuyuki Koguchi
Keyword(s):  
Quantum Dots ◽  
High Quality ◽  
Inas Quantum Dots

Control of InxGa1-xAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots

2004 ◽  
Vol 43 (4B) ◽  
pp. 1978-1980 ◽  
Author(s):  
Pachamuthu Jayavel ◽  
Hirokazu Tanaka ◽  
Takashi Kita ◽  
Osamu Wada ◽  
Hiroji Ebe ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Polarization ◽  
Inas Quantum Dots ◽  
Capping Layer

Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer

2010 ◽  
Vol 97 (9) ◽  
pp. 092110 ◽  
Author(s):  
J. F. Chen ◽  
Ross C. C. Chen ◽  
C. H. Chiang ◽  
Y. F. Chen ◽  
Y. H. Wu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Strain Relaxation ◽  
Inas Quantum Dots ◽  
Capping Layer

scholarly journals Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

2007 ◽  
Vol 101 (8) ◽  
pp. 081707 ◽  
Author(s):  
J. M. Ulloa ◽  
C. Çelebi ◽  
P. M. Koenraad ◽  
A. Simon ◽  
E. Gapihan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Scale ◽  
Inas Quantum Dots ◽  
Capping Layer ◽  
The Impact

Optical Gain of Polarized Emission in InAs Quantum Dots with InxGa1-xAs Capping Layer

2005 ◽  
Author(s):  
Y.C. Zhang ◽  
N. Tamura ◽  
T. Kita ◽  
O. Wada ◽  
Y. Nakata ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Gain ◽  
Inas Quantum Dots ◽  
Capping Layer ◽  
Polarized Emission

AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots

2019 ◽  
Vol 90 ◽  
pp. 212-218 ◽  
Author(s):  
R. Cisneros Tamayo ◽  
G. Polupan ◽  
T.V. Torchynska ◽  
L.G. Vega-Macotela ◽  
A. Stintz ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Inas Quantum Dots ◽  
Capping Layer
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