Angular correlation properties of 2D-nano-roughness-induced speckle patterns for silica-on-silicon wafers

2003 ◽  
Vol 0 (8) ◽  
pp. 3027-3031
Author(s):  
A. Bony ◽  
Y. Takakura ◽  
K. Satzke ◽  
P. Meyrueis
Keyword(s):  
Angular Correlation ◽  
Silicon Wafers ◽  
Speckle Patterns ◽  
Correlation Properties

Light-scattering Speckle Patterns and Their Correlation Properties

1987 ◽  
Vol 34 (5) ◽  
pp. 633-642 ◽  
Author(s):  
J. Holoubek ◽  
H. Krug ◽  
J. Křepelka ◽  
J. Peřina ◽  
Z. Hradil
Keyword(s):  
Light Scattering ◽  
Speckle Patterns ◽  
Correlation Properties

scholarly journals Contribution of wave aberrations represented by Zernike polynomials to the cross-correlation function between distorted and actual speckle patterns

2021 ◽  
Vol 2091 (1) ◽  
pp. 012009
Author(s):  
T V Blagova ◽  
I Sh Khasanov
Keyword(s):  
Correlation Function ◽  
Optical System ◽  
Cross Correlation ◽  
Speckle Interferometry ◽  
Optical Systems ◽  
Zernike Polynomials ◽  
Ghost Imaging ◽  
Stochastic Nature ◽  
Speckle Patterns ◽  
Correlation Properties

Abstract Speckles are sensitive to the slightest inhomogeneities of the medium, which is used in optical research methods such as speckle interferometry. However, the stochastic nature of propagation of speckle fields complicates their accurate detection and processing. For example, aberrations in the optical system result in the decorrelation of the image of speckles with the actual speckles that are observed in free space. The report will consider the main types of wave aberrations of optical system and their influence on the correlation properties of speckle patterns. The research results can be used to optimize optical systems in which speckles play a significant role, for example, in classical ghost imaging.

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Angular correlation studies in Cr

1968 ◽  
Vol 111 (1) ◽  
pp. 657-677
Author(s):  
J MO ◽  
C LEWIS ◽  
M THOMAS ◽  
P TWIN
Keyword(s):  
Angular Correlation ◽  
Correlation Studies
Sign in / Sign up

Export Citation Format

Share Document