Variable range hopping in hydrogenated amorphous silicon

2004 ◽  
Vol 1 (1) ◽  
pp. 101-104 ◽  
Author(s):  
I. P. Zvyagin ◽  
I. A. Kurova ◽  
N. N. Ormont
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Hydrogenated Amorphous

scholarly journals Variable Range Hopping in Hydrogenated Amorphous Silicon-Nickel Alloys

2012 ◽  
Vol 03 (07) ◽  
pp. 517-520 ◽  
Author(s):  
Abdelfattah Narjis ◽  
Abdelhamid El kaaouachi ◽  
Abdelghani Sybous ◽  
Lhoussine Limouny ◽  
Said Dlimi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Nickel Alloys ◽  
Hydrogenated Amorphous Silicon ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Hydrogenated Amorphous

Variable range hopping in hydrogenated amorphous silicon-nickel alloys

2012 ◽  
Author(s):  
Abdelfattah Narjis ◽  
Abdelhamid El Kaaouachi ◽  
Abdelghani Sybous ◽  
Lhoussine Limouny ◽  
Said Dlimi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Nickel Alloys ◽  
Hydrogenated Amorphous Silicon ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Hydrogenated Amorphous

1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

2015 ◽  
Vol 1770 ◽  
pp. 25-30 ◽  
Author(s):  
V.C. Lopes ◽  
A.J. Syllaios ◽  
D. Whitfield ◽  
K. Shrestha ◽  
C.L. Littler
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Noise Component ◽  
Variable Range ◽  
Noise Measurements ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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