Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN

2003 ◽  
Vol 0 (7) ◽  
pp. 2339-2342 ◽  
Author(s):  
Debdeep Jena ◽  
S. Heikman ◽  
J. S. Speck ◽  
U. K. Mishra ◽  
A. Link ◽  
...  
Keyword(s):  
Effective Mass ◽  
Quantum Scattering ◽  
Alloy Scattering ◽  
Scattering Potential ◽  
3D Electron ◽  
Magnetotransport Measurement ◽  
Scattering Time

Determination of the alloy scattering potential in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions from magnetotransport measurements

2005 ◽  
Vol 40 (24) ◽  
pp. 6391-6397 ◽  
Author(s):  
E. Tiraş ◽  
S. Altinöz ◽  
M. Cankurtaran ◽  
H. Çelik ◽  
N. Balkan
Keyword(s):  
Alloy Scattering ◽  
Scattering Potential

scholarly journals Carrier velocity‐field characteristics and alloy scattering potential in Si1−xGex/Si

1993 ◽  
Vol 63 (10) ◽  
pp. 1393-1395 ◽  
Author(s):  
S. H. Li ◽  
J. M. Hinckley ◽  
J. Singh ◽  
P. K. Bhattacharya
Keyword(s):  
Velocity Field ◽  
Alloy Scattering ◽  
Scattering Potential ◽  
Carrier Velocity

Transport and quantum scattering time in field-effect transistors

2007 ◽  
Vol 90 (17) ◽  
pp. 172104 ◽  
Author(s):  
M. Sakowicz ◽  
J. Łusakowski ◽  
K. Karpierz ◽  
M. Grynberg ◽  
B. Majkusiak
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Quantum Scattering ◽  
Scattering Time

Nernst–Ettingshausen Effects in GaxIn1–xAs alloys

1973 ◽  
Vol 51 (22) ◽  
pp. 2369-2375 ◽  
Author(s):  
Denis J. E. Demars ◽  
John C. Woolley
Keyword(s):  
Experimental Data ◽  
Magnetic Fields ◽  
Effective Mass ◽  
Room Temperature ◽  
Optical Scattering ◽  
Temperature Measurements ◽  
Scattering Coefficient ◽  
Alloy Sample ◽  
Alloy Scattering ◽  
Good Agreement

Room temperature measurements of longitudinal and transverse Nernst–Ettingshausen coefficients [Formula: see text] have been made on samples of GaxIn1–xAs alloys for a range of magnetic fields (B) up to 3.2 Wb/m2. Previous theoretical expressions for the values of these coefficients have been extended to the case of electrons in a single Kane band, and hence expressions for [Formula: see text] and [Formula: see text] obtained in terms of B, the bottom of the band effective mass m0*, and the scattering coefficient s. Fitting of these expressions to the experimental data thus has given values of m0* and s for each alloy sample. The values of m0* are found to be in good agreement with those obtained previously from plasma reflectance work, while the values of s indicate that over most of the alloy range polar optical scattering is predominant, but that in the range 0.4 < x < 0.7, alloy scattering may also have some contribution.

Alloy scattering potential inp‐type Ga1−xAlxAs

1983 ◽  
Vol 54 (10) ◽  
pp. 5785-5792 ◽  
Author(s):  
Kazuya Masu ◽  
Eisuke Tokumitsu ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Alloy Scattering ◽  
Scattering Potential

Determination of alloy scattering potential in Ga1−xAlxAs alloys

1985 ◽  
Vol 58 (7) ◽  
pp. 2640-2645 ◽  
Author(s):  
A. K. Saxena ◽  
A. R. Adams
Keyword(s):  
Alloy Scattering ◽  
Scattering Potential
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