On the interaction between a vacancy and an interstitial impurity atom in B.C.C. transition metals

1983 ◽  
Vol 116 (1) ◽  
pp. 9-16 ◽  
Author(s):  
K. Masuda
Keyword(s):  
Transition Metals ◽  
Impurity Atom ◽  
Interstitial Impurity

Dynamics of a Crystal with Interstitial Impurity Atom

1979 ◽  
Vol 47 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yoshiko H. Ohashi ◽  
Kazutoshi Ohashi
Keyword(s):  
Impurity Atom ◽  
Interstitial Impurity

Diffusion mechanism in cutting Ni-based alloy containing γ′ phase (Ni3Al) with CBN tool based on MD simulation

2021 ◽  
pp. 095440542110024
Author(s):  
YiHang Fan ◽  
WenYuan Wang ◽  
ZhaoPeng Hao
Keyword(s):  
Impurity Atom ◽  
Md Simulation ◽  
Diffusion Mechanism ◽  
Interstitial Impurity ◽  
Diffusion Activation Energy ◽  
Temperature Oxidation ◽  
Substitutional Impurity ◽  
Impurity Atoms ◽  
Cbn Tool ◽  
Cutting Model

Ni-based alloys are widely used in aerospace because of their high strength and high temperature oxidation resistance. CBN tool is suitable for precision machining of Ni-based alloy. Diffusion wear is an important wear form of CBN tool in the process of cutting Ni-based alloy. Therefore, it is of great significance to study the diffusion phenomenon in the process of cutting Ni-based alloy with CBN tool. In this paper, the cutting model of Ni-based alloy containing γ′ phase (Ni3Al) with CBN tool is established based on the molecular dynamics (MD) simulation method. The self diffusion activation energy of all kinds of atoms in the workpiece and the formation energy of several point defects in the tool are calculated, so as to study in depth the atom diffusion mechanism according to the simulation results. The results show that the atoms in the crystal boundary of the workpiece are the most easily diffused, followed by the atoms in the phase boundary, and the atoms in the lattice are the most difficult to diffuse. When the workpiece atoms diffuse into the tool, it is easier to diffuse into the tool grain boundary than to form interstitial impurity atoms or displacement impurity atoms. It is more difficult to form the substitutional impurity atom than to form the interstitial impurity atom.

Vibrational Motion of an Interstitial Impurity Atom in a Face Centered Cubic Crystal

1981 ◽  
Vol 50 (9) ◽  
pp. 2948-2954 ◽  
Author(s):  
Yoshiko H. Ohashi ◽  
Misuzu Kaneko ◽  
Mitsuru Fukuchi ◽  
Kazutoshi Ohashi
Keyword(s):  
Impurity Atom ◽  
Interstitial Impurity ◽  
Face Centered Cubic ◽  
Vibrational Motion ◽  
Cubic Crystal ◽  
Face Centered

Ab initio solute–interstitial impurity interactions in vanadium alloys: the roles of vacancy

RSC Advances ◽  
2016 ◽  
Vol 6 (82) ◽  
pp. 78621-78628 ◽  
Author(s):  
Lei Deng ◽  
Lizhong Tang ◽  
Xingming Zhang ◽  
Jianfeng Tang ◽  
Ruilian Li ◽  
...  
Keyword(s):  
Transition Metals ◽  
Ab Initio ◽  
Interstitial Impurity ◽  
Vanadium Alloys ◽  
Interstitial Impurities

This study aims to characterize the interactions between substitutional solutes (3d, 4d and 5d transition metals) and interstitial impurities (C and O) in vanadium alloys, with or without the presence of an adjacent vacancy.

Precipitation in silicon: Microanalysis

1988 ◽  
Vol 46 ◽  
pp. 474-475
Author(s):  
R.W. Carpenter
Keyword(s):  
Transition Metals ◽  
Spatial Resolution ◽  
Thin Foil ◽  
Precipitation Reaction ◽  
High Current ◽  
Reaction Products ◽  
Carbon And Nitrogen ◽  
Dielectric Layers ◽  
Precipitation Processes ◽  
Areas Of Interest

Interest in precipitation processes in silicon appears to be centered on transition metals (for intrinsic and extrinsic gettering), and oxygen and carbon in thermally aged materials, and on oxygen, carbon, and nitrogen in ion implanted materials to form buried dielectric layers. A steadily increasing number of applications of microanalysis to these problems are appearing. but still far less than the number of imaging/diffraction investigations. Microanalysis applications appear to be paced by instrumentation development. The precipitation reaction products are small and the presence of carbon is often an important consideration. Small high current probes are important and cryogenic specimen holders are required for consistent suppression of contamination buildup on specimen areas of interest. Focussed probes useful for microanalysis should be in the range of 0.1 to 1nA, and estimates of spatial resolution to be expected for thin foil specimens can be made from the curves shown in Fig. 1.

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