Near-Band-Edge Optical Properties of TlGaS2xSe2(1−x) Mixed Crystals

1980 ◽  
Vol 102 (1) ◽  
pp. K19-K22 ◽  
Author(s):  
S. G. Abdullaeva ◽  
G. L. Belenkii ◽  
N. T. Mamedov
Keyword(s):  
Optical Properties ◽  
Mixed Crystals ◽  
Band Edge ◽  
Near Band Edge

Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance

1999 ◽  
Vol 86 (1) ◽  
pp. 425-429 ◽  
Author(s):  
M. E. Constantino ◽  
H. Navarro-Contreras ◽  
B. Salazar-Hernández ◽  
M. A. Vidal ◽  
A. Lastras-Martı́nez ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Edge ◽  
Near Band Edge ◽  
Phase Selection

Near band-edge optical properties of cubic GaN

2003 ◽  
Vol 125 (3-4) ◽  
pp. 205-208 ◽  
Author(s):  
J.R.L. Fernandez ◽  
O.C. Noriega ◽  
J.A.N.T. Soares ◽  
F. Cerdeira ◽  
E.A. Meneses ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Edge ◽  
Near Band Edge ◽  
Cubic Gan

Near-band-edge optical properties of MBE-grown ZnSe epilayers on GaAs by modulation spectroscopy

1998 ◽  
Author(s):  
Ru-Chin Tu ◽  
Yan-Kuin Su ◽  
Ying-Sheng Huang ◽  
Shoou-Jinn Chang
Keyword(s):  
Optical Properties ◽  
Band Edge ◽  
Near Band Edge ◽  
Modulation Spectroscopy

Near-band-edge optical properties of molecular beam epitaxy grown ZnSe epilayers on GaAs by modulation spectroscopy

1998 ◽  
Vol 83 (3) ◽  
pp. 1664-1669 ◽  
Author(s):  
R. C. Tu ◽  
Y. K. Su ◽  
C. F. Li ◽  
Y. S. Huang ◽  
S. T. Chou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge ◽  
Near Band Edge ◽  
Modulation Spectroscopy

Near band-edge optical properties of cubic GaN with and without carbon doping

2004 ◽  
Vol 35 (1) ◽  
pp. 73-77 ◽  
Author(s):  
J.R.L. Fernandez ◽  
F. Cerdeira ◽  
E.A. Meneses ◽  
J.A.N.T. Soares ◽  
O.C. Noriega ◽  
...  
Keyword(s):  
Optical Properties ◽  
Carbon Doping ◽  
Band Edge ◽  
Near Band Edge ◽  
Cubic Gan

Near-band-edge optical properties ofGaSexTe1−xmixed crystals

1979 ◽  
Vol 19 (2) ◽  
pp. 1060-1068 ◽  
Author(s):  
J. Camassel ◽  
P. Merle ◽  
H. Mathieu ◽  
A. Gouskov
Keyword(s):  
Optical Properties ◽  
Band Edge ◽  
Near Band Edge

scholarly journals Annealing Behavior of The Photoluminescence Lines in CdTe and Znx Cd1−x Te Single Crystals

1989 ◽  
Vol 161 ◽  
Author(s):  
J. Gonzalez-Hernandez ◽  
A. Reyes-Mena ◽  
Elias Lopez-Cruz ◽  
D.D. Allred ◽  
Worth P. Allred
Keyword(s):  
Single Crystals ◽  
Mixed Crystals ◽  
Band Edge ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Photoluminescence Spectra ◽  
Edge Emission ◽  
Annealing Behavior ◽  
Pl Spectra ◽  
Compositional Range

ABSTRACTThe main lines in the photoluminescence spectra of Zn1Cd1−xTe single crystals grown by a modified Bridgman method in the compositional range of 0 ≤ X ≤ 0.25 have been identified. All crystals show only near-band-edge emission. To assist in the identification, various samples with different compositions were annealed under a Cd atmosphere. In the pure crystals, the prominent (A°,X) bound exciton line, as well as the doublet at longer wavelengths, disappear after the annealing. In contrast, the treatments do not change significantly the PL spectra of the mixed crystals.

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