Influence of band-tail parameters on electronic specific heat and transport coefficients in heavily doped semiconductors

1978 ◽  
Vol 90 (1) ◽  
pp. 401-407 ◽  
Author(s):  
H. van Cong
Keyword(s):  
Specific Heat ◽  
Transport Coefficients ◽  
Electronic Specific Heat ◽  
Band Tail ◽  
Doped Semiconductors ◽  
Heavily Doped

Negative Magnetoresistance in Semiconductors with Overlapping Impurity and Conduction Bands

1972 ◽  
Vol 50 (2) ◽  
pp. 165-170 ◽  
Author(s):  
J. S. Lass
Keyword(s):  
Experimental Data ◽  
Fermi Level ◽  
Conduction Band ◽  
Density Of States ◽  
Simple Function ◽  
Negative Magnetoresistance ◽  
Band Tail ◽  
Doped Semiconductors ◽  
Conduction Bands ◽  
Heavily Doped

Negative magnetoresistance observed in many heavily doped semiconductors is considered as due to a change in the population of states for which the product Δ(E) of the mobility and the density of states varies rapidly with energy. A logarithmic form of Δ(E) is found to give an excellent fit to experimental data which can thereby be described as a simple function of H/(T + θ). The form of Δ(E) suggests that the Fermi level lies in a conduction-band tail with a width of 2kθ, typically 0.2 meV for Ge and CdS. Possible repopulation mechanisms are considered.

scholarly journals Free electron nonlinearities in heavily doped semiconductors plasmonics

2021 ◽  
Vol 103 (11) ◽  
Author(s):  
Federico De Luca ◽  
Michele Ortolani ◽  
Cristian Ciracì
Keyword(s):  
Free Electron ◽  
Doped Semiconductors ◽  
Heavily Doped

Percolation in Heavily Doped Semiconductors

1969 ◽  
Vol 183 (3) ◽  
pp. 773-776 ◽  
Author(s):  
D. F. Holcomb ◽  
J. J. Rehr
Keyword(s):  
Doped Semiconductors ◽  
Heavily Doped
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