Numerical Simulation and Performance Evaluation of Highly Efficient Sb 2 Se 3 Solar Cell with SnS as Hole Transport Layer

2021 ◽  
Author(s):  
Adil Sunny ◽  
Sheikh Rashel Al Ahmed
Keyword(s):  
Numerical Simulation ◽  
Performance Evaluation ◽  
Solar Cell ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Highly Efficient ◽  
And Performance

Numerical study of highly efficient tin-based perovskite solar cell with MoS2 hole transport layer

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Muhammad Shafiqul Islam ◽  
Sabrina Rahman ◽  
Adil Sunny ◽  
Md. Ashfaqul Haque ◽  
Md. Suruz Mian ◽  
...  
Keyword(s):  
Solar Cell ◽  
Molybdenum Disulfide ◽  
Numerical Study ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Transport Layer ◽  
Lead Free ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
Highly Efficient

Abstract The present work investigates a tin-based highly efficient perovskite solar cell (PSC) by a solar cell capacitance simulator in one dimension. Molybdenum disulfide is introduced as hole transport layer in the proposed solar cell device structure. The photovoltaic performances of the proposed solar cell are investigated by varying thickness, doping concentration, and bulk defect density of various layers. Furthermore, the operating temperature and the series and shunt resistances are analyzed systematically. A higher conversion efficiency of 25.99% is obtained at the absorber thickness of 2000 nm. The optimum doping density of 1017 cm−3 is estimated for the absorber, electron transport layer (ETL), and hole transport layer (HTL), respectively. The optimum thicknesses of 50 nm, 1000 nm, and 60 nm are also found for the titanium dioxide as ETL, methylammonium tin triiodide (CH3NH3SnI3) as absorber layer, and molybdenum disulfide as HTL, respectively. The efficiency of the proposed lead-free CH3NH3SnI3-based solar cell with the alternative molybdenum disulfide HTL is calculated to be 24.65% with open-circuit voltage of 0.89 V, short-circuit current density of 34.04 mA/cm2, and fill-factor of 81.46% for the optimum parameters of all layers. These findings would contribute to fabricate low-cost, non-toxic, stable, and durable lead-free PSCs for the next generation.

scholarly journals Analysis of The Efficiency In Sb2Se3 Thin-Film Solar Cells Using Alternative Buffer Layers In n-p and n-i-p Structures By Numerical Simulation.

2021 ◽  
Author(s):  
F Ayala-Mato ◽  
O Vigil-Galán ◽  
Maykel Courel ◽  
M. M. Nicolás-Marín
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Defect Density ◽  
Hole Transport ◽  
Inorganic Materials ◽  
Band Alignment ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Solar Cell Performance

Abstract Antimony Sulfide (Sb2Se3) Solar Cells are considered a promising emerging photovoltaic devices technology. However, the best reported experimental efficiency (9.2%) is well below the theoretical limit of 30%. In this research is demonstrated, by numerical simulation, that using different buffer or electron transport layers (ETL) and device structures (n-p or n-i-p) can significantly increase the solar cell performance. The study is based on two underlying considerations: the use of inorganic materials to facilitate the manufacturing process and the analysis of the simulation parameters that adjust to the experimental conditions in which the cells can be processed. In the n-p structures, the use of single layers and bilayers as ETL was evaluated and the possible mechanism that explain the electrical parameters of the solar cell were discussed. Especial attention was made in the role of interfacial state density and band alignment in the ETL/Sb2Se3 interface. In addition, the n-i-p structure was studied by adding a hole transport layer (HTL). An improvement in open circuit voltage (Voc) is observed compared with n-p structure. Finally, the behavior of Voc and efficiency vs thickness of the ETL and Sb2Se3 layers was analyzed. The results show that using alternative ETLs a significant improve in Voc and efficiency could be achieved for n-p and n-i-p structures. After thickness optimization and taking account a moderate interface defect density, values of Voc and efficiency higher than 600 mV and 15 % were respectively obtained.

Chalcogenide As Inorganic Transport Layer in Perovskite Solar Cell

2021 ◽  
Author(s):  
Atul kumar
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Band Alignment ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Band Offset ◽  
Primary Concern ◽  
Earth Abundant

Abstract Fill factor (FF) deficit and stability is a primary concern with the perovskite solar cell. Resistance values and band alignment at junction interface in perovskite are causing low fill factor. Moisture sensitivity of methylammonium lead halide perovskite is causing a stability issue. We tried to solve these issues by using inorganic hole transport layer (HTL). FF is sensitive to the band offset values. We study the band alignment/band offset effect at the Perovskite /HTL junction. Inorganic material replacing Spiro-MeOTAD can enhance the stability of the device by providing an insulation from ambient. Our simulation study shows that the earth abundant p-type chalcogenide materials of SnS as HTL in perovskite is comparable to Spiro-MeOTAD efficiency.

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