High Quality, Mass‐Producible Semipolar GaN and InGaN Light‐Emitting Diodes Grown on Sapphire

2020 ◽  
Vol 257 (4) ◽  
pp. 1900565
Author(s):  
Jie Song ◽  
Jung Han
Keyword(s):  
Light Emitting Diodes ◽  
High Quality ◽  
Light Emitting ◽  
Semipolar Gan

Enhanced Cyan Emission and Optical Tuning of Ca 3 Ga 4 O 9 :Bi 3+ for High‐Quality Full‐Spectrum White Light‐Emitting Diodes

2020 ◽  
Vol 8 (22) ◽  
pp. 2001037 ◽  
Author(s):  
Dongjie Liu ◽  
Xiaohan Yun ◽  
Guogang Li ◽  
Peipei Dang ◽  
Maxim S. Molokeev ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
High Quality ◽  
Full Spectrum ◽  
Light Emitting ◽  
White Light Emitting Diodes

High-quality all-fluorescent white organic light-emitting diodes obtained by balancing carriers with hole limit layer

2022 ◽  
Vol 123 ◽  
pp. 111917
Author(s):  
Kai Chen ◽  
Ruixia Wu ◽  
Xiaokang Li ◽  
Weiqiang Liu ◽  
Zhipeng Wei ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
High Quality ◽  
Light Emitting ◽  
Organic Light

Microwave-assisted synthesis of high-quality “all-inorganic” CsPbX3 (X = Cl, Br, I) perovskite nanocrystals and their application in light emitting diodes

2017 ◽  
Vol 5 (42) ◽  
pp. 10947-10954 ◽  
Author(s):  
Qi Pan ◽  
Huicheng Hu ◽  
Yatao Zou ◽  
Min Chen ◽  
Linzhong Wu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Microwave Assisted Synthesis ◽  
High Quality ◽  
Light Emitting ◽  
Perovskite Nanocrystals ◽  
Microwave Assisted

A fast and efficient microwave-assisted strategy is developed to prepare high-quality CsPbX3 nanocrystals with controllable morphologies (nanoplate, nanocube, and nanorod).

Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

2005 ◽  
Vol 44 (No. 30) ◽  
pp. L945-L947 ◽  
Author(s):  
Arpan Chakraborty ◽  
Troy J. Baker ◽  
Benjamin A. Haskell ◽  
Feng Wu ◽  
James S. Speck ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Semipolar Gan

scholarly journals Quantum Dots and Applications

Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 897
Author(s):  
Chang-Yeol Han ◽  
Hyun-Sik Kim ◽  
Heesun Yang
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Band Gap ◽  
Light Emitting Diodes ◽  
Photovoltaic Cells ◽  
Core Shell ◽  
Special Issue ◽  
High Quality ◽  
Light Emitting ◽  
Size Dependent

It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic fields such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be significantly improved via optimization of the processes by which they are synthesized. Control of their core/shell heterostructures is especially important and advantageous. However, a few challenges remain to be overcome before QD-based devices can completely replace current optoelectronic technology. This Special Issue provides detailed guides for synthesis of high-quality QDs and their applications. In terms of fabricating devices, tailoring optical properties of QDs and engineering defects in QD-related interfaces for higher performance remain important issues to be addressed.

scholarly journals Perovskite-molecule composite thin films for efficient and stable light-emitting diodes

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Heyong Wang ◽  
Felix Utama Kosasih ◽  
Hongling Yu ◽  
Guanhaojie Zheng ◽  
Jiangbin Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Degradation Mechanism ◽  
Deep Understanding ◽  
Significant Progress ◽  
High Quality ◽  
Composite Thin Films ◽  
Light Emitting

AbstractAlthough perovskite light-emitting diodes (PeLEDs) have recently experienced significant progress, there are only scattered reports of PeLEDs with both high efficiency and long operational stability, calling for additional strategies to address this challenge. Here, we develop perovskite-molecule composite thin films for efficient and stable PeLEDs. The perovskite-molecule composite thin films consist of in-situ formed high-quality perovskite nanocrystals embedded in the electron-transport molecular matrix, which controls nucleation process of perovskites, leading to PeLEDs with a peak external quantum efficiency of 17.3% and half-lifetime of approximately 100 h. In addition, we find that the device degradation mechanism at high driving voltages is different from that at low driving voltages. This work provides an effective strategy and deep understanding for achieving efficient and stable PeLEDs from both material and device perspectives.

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