Optical Response of Epitaxial ZnO Films Grown by Atomic Layer Deposition and Coimplanted with Dy and Yb

2020 ◽  
Vol 257 (8) ◽  
pp. 1900513 ◽  
Author(s):  
Elżbieta Guziewicz ◽  
Serhiy Kobyakov ◽  
Renata Ratajczak ◽  
Aleksandra Wierzbicka ◽  
Wojciech Wozniak ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical Response ◽  
Zno Films ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

Hydrogen in As‐Grown and Annealed ZnO Films Grown by Atomic Layer Deposition

2020 ◽  
Vol 218 (1) ◽  
pp. 2000318
Author(s):  
Elzbieta Guziewicz ◽  
Wojciech Wozniak ◽  
Sushma Mishra ◽  
Rafal Jakiela ◽  
Marek Guziewicz ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

Low-temperature atomic layer deposition of ZnO films on particles in a fluidized bed reactor

2008 ◽  
Vol 516 (23) ◽  
pp. 8517-8523 ◽  
Author(s):  
David M. King ◽  
Xinhua Liang ◽  
Peng Li ◽  
Alan W. Weimer
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Fluidized Bed ◽  
Atomic Layer ◽  
Fluidized Bed Reactor ◽  
Zno Films ◽  
Layer Deposition

Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition

2006 ◽  
Vol 510-511 ◽  
pp. 670-673 ◽  
Author(s):  
Chong Mu Lee ◽  
Yeon Kyu Park ◽  
Anna Park ◽  
Choong Mo Kim
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Xrd Analysis ◽  
Nitrogen Atmosphere ◽  
Zno Thin Films ◽  
Zno Films ◽  
Annealing Atmosphere ◽  
Zno Film ◽  
Layer Deposition

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.

In situ Al-doped ZnO films by atomic layer deposition with an interrupted flow

2015 ◽  
Vol 165 ◽  
pp. 245-252 ◽  
Author(s):  
Jheng-Ming Huang ◽  
Ching-Shun Ku ◽  
Chih-Ming Lin ◽  
San-Yuan Chen ◽  
Hsin-Yi Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno ◽  
Interrupted Flow

scholarly journals Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Molecules ◽  
2020 ◽  
Vol 25 (21) ◽  
pp. 5043
Author(s):  
Chia-Hsun Hsu ◽  
Xin-Peng Geng ◽  
Wan-Yu Wu ◽  
Ming-Jie Zhao ◽  
Xiao-Ying Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
High Speed ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Zno Films ◽  
X Ray ◽  
Layer Deposition

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

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