Anomalous Manifestation of Pauli Paramagnetism and Coulomb Blockade of Spin Exchange upon the Compensation of Doped Semiconductors

2019 ◽  
Vol 257 (1) ◽  
pp. 1900249 ◽  
Author(s):  
Andrei Zabrodskii ◽  
Anatoly Veinger ◽  
Petr Semenikhin
Keyword(s):  
Coulomb Blockade ◽  
Spin Exchange ◽  
Doped Semiconductors ◽  
Pauli Paramagnetism

Spin exchange, past, present and future

1985 ◽  
Vol 10 (6) ◽  
pp. 645-657 ◽  
Author(s):  
W. Happer
Keyword(s):  
Spin Exchange

One-electron transistors based on Coulomb blockade and quantum interference

1999 ◽  
Vol 169 (4) ◽  
pp. 471 ◽  
Author(s):  
Z.D. Kvon ◽  
L.V. Litvin ◽  
V.A. Tkachenko ◽  
A.L. Aseev
Keyword(s):  
Coulomb Blockade ◽  
Quantum Interference ◽  
Electron Transistors

Transport and fluctuations in nonlinear-dissipative systems: role of interparticle collisions

1999 ◽  
Vol 4 ◽  
pp. 31-86 ◽  
Author(s):  
R. Katilius ◽  
A. Matulionis ◽  
R. Raguotis ◽  
I. Matulionienė
Keyword(s):  
Electric Fields ◽  
Carrier Density ◽  
Experimental Results ◽  
Dissipative Systems ◽  
Doped Semiconductors ◽  
Electron Diffusion ◽  
Electron Collisions ◽  
Electric Noise ◽  
Diffusion Phenomena

The goal of the paper is to overview contemporary theoretical and experimental research of the microwave electric noise and fluctuations of hot carriers in semiconductors, revealing sensitivity of the noise spectra to non-linearity in the applied electric field strength and, especially, in the carrier density. During the last years, investigation of electronic noise and electron diffusion phenomena in doped semiconductors was in a rapid progress. By combining analytic and Monte Carlo methods as well as the available experimental results on noise, it became possible to obtain the electron diffusion coefficients in the range of electric fields where inter-electron collisions are important and Price’s relation is not necessarily valid. Correspondingly, a special attention to the role of inter-electron collisions and of the non-linearity in the carrier density while shaping electric noise and diffusion phenomena in the non-equilibrium states will be paid. The basic and up-to-date information will be presented on methods and advances in this contemporary field - the field in which methods of non-linear analytic and computational analysis are indispensable while seeking coherent understanding and interpretation of experimental results.

A Solid-State Near-IR Laser for Spin-Exchange Optical Pumping

2020 ◽  
Vol 84 (11) ◽  
pp. 1359-1361
Author(s):  
A. A. Antipov ◽  
A. G. Putilov ◽  
A. V. Osipov ◽  
A. E. Shepelev
Keyword(s):  
Solid State ◽  
Optical Pumping ◽  
Spin Exchange ◽  
Spin Exchange Optical Pumping ◽  
Near Ir ◽  
Ir Laser

Nanoscale Capacitance and Capacitance-Voltage Curves for Advanced Characterization of Electrical Properties of Si and GaN Structures Using Scanning Microwave Impedance Microscopy

2016 ◽  
Author(s):  
Stuart Friedman ◽  
Oskar Amster ◽  
Yongliang Yang ◽  
Fred Stanke
Keyword(s):  
Process Development ◽  
Advanced Characterization ◽  
Electrical Measurement ◽  
Depletion Layer ◽  
Doped Semiconductors ◽  
Force Microscopy ◽  
Nano Scale ◽  
Capacitance Voltage ◽  
Systematic Response ◽  
Lock In

Abstract The use of Atomic Force Microscopy (AFM) electrical measurement modes is a critical tool for the study of semiconductor devices and process development. A relatively new electrical mode, scanning microwave impedance microscopy (sMIM), measures a material’s change in permittivity and conductivity at the scale of an AFM probe tip [1]. sMIM provides the real and imaginary impedance (Re(Z) and Im(Z)) of the probe-sample interface. By measuring the reflected microwave signal as a sample of interest is imaged with an AFM, we can in parallel capture the variations in permittivity and conductivity and, for doped semiconductors, variations in the depletion-layer geometry. An existing technique for characterizing doped semiconductors, scanning capacitance microscopy, modulates the tip-sample bias and detects the tip-sample capacitance with a lock-in amplifier. A previous study compares sMIM to SCM and highlights the additional capabilities of sMIM [2], including examples of nano-scale capacitance-voltage curves. In this paper we focus on the detailed mechanisms and capabilities of the nano-scale C-V curves and the ability to extract semiconductor properties from them. This study includes analytical and finite element modeling of tip bias dependent depletion-layer geometry and impedance. These are compared to experimental results on reference samples for both doped Si and GaN doped staircases to validate the systematic response of the sMIM-C (capacitive) channel to the doping concentration.

Effect of dielectric constant on the rate of electron spin exchange of Fremy's salt in solution

1986 ◽  
Vol 51 (11) ◽  
pp. 2433-2436 ◽  
Author(s):  
Hamza A. Hussain ◽  
Waleed A. A. Kuder
Keyword(s):  
Aqueous Solution ◽  
Dielectric Constant ◽  
Electron Spin ◽  
Spin Exchange ◽  
Bimolecular Collisions

The rate of electron spin exchange in aqueous solution of potassium nitrosodisulphonate K2(SO3)2NO, has been investigated by ESR and found to depend on the dielectric constant of the medium. This observation lead to the calculation of the collision diameter 2 nm which corresponds to bimolecular collisions between species carrying two nagative charges.

Phenomena and devices at the quantum scale and the mesoscale

2017 ◽  
Author(s):  
Sandip Tiwari
Keyword(s):  
Coulomb Blockade ◽  
Secure Communication ◽  
Quantum Hall ◽  
Nanoscale Device ◽  
Self Energy ◽  
Stability Diagrams ◽  
Charge Stability ◽  
Bohm Effect ◽  
Aharonov Bohm ◽  
Non Locality

Unique nanoscale phenomena arise in quantum and mesoscale properties and there are additional intriguing twists from effects that are classical in origin. In this chapter, these are brought forth through an exploration of quantum computation with the important notions of superposition, entanglement, non-locality, cryptography and secure communication. The quantum mesoscale and implications of nonlocality of potential are discussed through Aharonov-Bohm effect, the quantum Hall effect in its various forms including spin, and these are unified through a topological discussion. Single electron effect as a classical phenomenon with Coulomb blockade including in multiple dot systems where charge stability diagrams may be drawn as phase diagram is discussed, and is also extended to explore the even-odd and Kondo consequences for quantum-dot transport. This brings up the self-energy discussion important to nanoscale device understanding.

scholarly journals Spin-exchange rates in electron-hydrogen collisions

2007 ◽  
Vol 374 (2) ◽  
pp. 547-555 ◽  
Author(s):  
S. R. Furlanetto ◽  
M. R. Furlanetto
Keyword(s):  
Exchange Rates ◽  
Spin Exchange
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