Optically Induced Long‐Range Coupling Studies in a Single GaAs Laterally Coupled Quantum Dot

2019 ◽  
Vol 256 (6) ◽  
pp. 1800532 ◽  
Author(s):  
Heedae Kim ◽  
Jong Su Kim
2006 ◽  
Vol 88 (24) ◽  
pp. 243507 ◽  
Author(s):  
K. S. Narayan ◽  
Manohar Rao ◽  
R. Zhang ◽  
P. Maniar

Nanoscale ◽  
2015 ◽  
Vol 7 (44) ◽  
pp. 18435-18440 ◽  
Author(s):  
Samuel M. Goodman ◽  
Albert Siu ◽  
Vivek Singh ◽  
Prashant Nagpal

2011 ◽  
Vol 107 (8) ◽  
Author(s):  
E. Poem ◽  
O. Kenneth ◽  
Y. Kodriano ◽  
Y. Benny ◽  
S. Khatsevich ◽  
...  

ACS Nano ◽  
2016 ◽  
Vol 10 (7) ◽  
pp. 7208-7215 ◽  
Author(s):  
Seog Joon Yoon ◽  
Zhi Guo ◽  
Paula C. dos Santos Claro ◽  
Elena V. Shevchenko ◽  
Libai Huang

2007 ◽  
Vol 06 (05) ◽  
pp. 383-387
Author(s):  
T. V. TORCHYNSKA ◽  
E. VELÁZQUEZ LOZADA ◽  
M. DYBIEC ◽  
S. OSTAPENKO ◽  
P. G. ELISEEV ◽  
...  

This paper presents the photoluminescence study at 12 K and scanning photoluminescence spectroscopy investigation of the ground and excited states at 80 and 300 K on InAs QDs inserted in In 0.15 Ga 0.85 As / GaAs QW structures and created at different QD growth temperatures. It is shown that investigated structures are characterized by the long range variation of an average QD size in QD ensemble across the wafer. This long range QD size inhomogeneity was used for investigation of the multi-excited state energy trend versus ground state energy (or QD sizes).


Author(s):  
Eilon Poem ◽  
Yaron Kodriano ◽  
Yael Benny ◽  
Stanislav Khatsevich ◽  
Oded Kenneth ◽  
...  

2018 ◽  
Vol 29 (50) ◽  
pp. 505201 ◽  
Author(s):  
Yue Ban ◽  
Xi Chen ◽  
Gloria Platero

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