Correlation of Intermittency of Quantum Dot Photoluminescence Intensity, Decay Time, and Energy

2018 ◽  
Vol 256 (2) ◽  
pp. 1800334
Author(s):  
Clemens Göhler ◽  
Robert Schmidt ◽  
Cornelius Krasselt ◽  
Christian von Borczyskowski
Keyword(s):  
Quantum Dot ◽  
Decay Time ◽  
Photoluminescence Intensity ◽  
Time And Energy ◽  
Intensity Decay

scholarly journals Fluorescent Decay Time and Energy Response ofGamma-CuI Crystal

2017 ◽  
Vol 32 (2) ◽  
pp. 163
Author(s):  
LI Feng-Rui ◽  
GU Mu ◽  
HE Hui ◽  
CHANG Li-Hua ◽  
WEN Wei-Feng ◽  
...  
Keyword(s):  
Decay Time ◽  
Energy Response ◽  
Time And Energy

Localisation of Carriers in Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
I. Mihalcescu ◽  
J. C. Vial ◽  
R. Romestain
Keyword(s):  
Simple Model ◽  
Porous Silicon ◽  
Temperature Variation ◽  
Time Evolution ◽  
Decay Time ◽  
Additional Assumption ◽  
Shape Evolution ◽  
Photoluminescence Intensity ◽  
Photoluminescence Decay ◽  
Strong Localization

AbstractWe analyze the intensity and decay time evolution of the porous silicon luminescence upon anodic oxidation, aging, chemiral thinning and temperature variation. Strong analogies are pointed out for the photoluminescence intensity as well as for the photoluminescence decay shape evolution. They are interpreted by the variation of the extension of the carrier wavefunction induced by the modification of potential barrier efficiencies. No additional assumption such as hopping of carriers was necessary to explain the decay shapes well fitted by stretched exponential. On the contrary our observations and our simple model are in favor of a strong localization of carriers. Some experimental results are revisited within the frame of this model.

scholarly journals Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes

2006 ◽  
Vol 48 (10) ◽  
pp. 1993-1999
Author(s):  
V. Donchev ◽  
E. S. Moskalenko ◽  
K. F. Karlsson ◽  
P. O. Holtz ◽  
B. Monemar ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Photoluminescence Intensity ◽  
Gaas Quantum Dot

Carrier dynamics in spatially ordered InAs quantum dots

2002 ◽  
Vol 719 ◽  
Author(s):  
Jörg Siegert ◽  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Rosa Leon ◽  
Sergio Chaparro ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
Photoluminescence Intensity ◽  
Inas Quantum Dots ◽  
Dislocation Arrays ◽  
Spatial Ordering

AbstractSpatial ordering of InAs quantum dots was attained by using misfit dislocations generated in a metastable InGaAs layer by means of thermal annealing. Influence of quantum dot positional ordering and dot proximity to dislocation arrays on carrier dynamics was studied by timeresolved photoluminescence. Substantially narrower inhomogeneous broadening from the ordered quantum dots was observed. Excitation intensity dependence of the photoluminescence intensity and carrier lifetime indicates stronger influence of nonradiative recombination for the ordered quantum dot structures. Numerical simulations allow estimating electron and hole capture rates from the quantum dots to traps located either at the quantum dot interfaces or in the vicinity of the quantum dots.

scholarly journals Time Resolved Optical Studies of InGaN Layers Grown on LGO

2002 ◽  
Vol 743 ◽  
Author(s):  
Maurice Cheung ◽  
Gon Namkoong ◽  
Madalina Furis ◽  
Fei Chen ◽  
Alexander. N. Cartwright ◽  
...  
Keyword(s):  
Structural Quality ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
Optical Studies ◽  
Time Resolved ◽  
Lattice Match ◽  
Spatially Resolved ◽  
Recombination Processes ◽  
Time Resolved Photoluminescence ◽  
Intensity Decay

ABSTRACTRadiative recombination processes in bulk InGaN grown by molecular beam epitaxy (MBE) on lithium gallate (LGO or LiGaO2) substrates were investigated using microscopic PL and time-resolved photoluminescence (TRPL). The improved structural quality resulting from a better lattice match of the LGO substrate to III-V nitride materials simplifies these investigations because well-defined composition phases can be analyzed for both homogeneous and phased separated InGaN samples. Epilayers of InGaN intentionally grown with and without indium segregation were studied. X-ray diffraction measurements showed that the homogeneous epilayer was high quality In0.208Ga0.702N and the segregated epilayer exhibited peaks corresponding to both In0.289Ga0.711N and In0.443Ga0.557N indicating the presence of higher In concentration regions in this sample. Spatially resolved photoluminescence spectra confirm the existence of these regions. The photoluminescence intensity decay is non-exponential for both samples and a stretched exponential fit to the decay data confirms the existence of local potential fluctuations in which carriers are localized before recombination.

scholarly journals Fabrication of highly transparent and luminescent quantum dot/polymer nanocomposite for light emitting diode using amphiphilic polymer-modified quantum dots

2020 ◽  
Author(s):  
Cheolsang Yoon
Keyword(s):  
Maleic Anhydride ◽  
Quantum Dot ◽  
Light Emitting Diode ◽  
Polymer Networks ◽  
Polymer Nanocomposite ◽  
Amphiphilic Polymer ◽  
Curing Temperature ◽  
Photoluminescence Intensity ◽  
Light Emitting ◽  
Uniform Dispersion

Herein we present the fabrication of a highly transparent and luminescent quantum dot (QD)/polymer nanocomposite for application in optoelectronic devices. First, we encapsulated CdSe@ZnS/ZnS core/shell QDs with an amphiphilic polymer, i.e., poly(styrene-co-maleic anhydride) (PSMA). By encapsulating QDs with PSMA instead of ligand exchange, the photoluminescence intensity of the QDs could be preserved even after surface modification. Next, the PSMA-modified QDs were used as crosslinkers for the aminopropyl-terminated polydimethylsiloxane (PDMS) resin in a ring-opening reaction between the maleic anhydride of the QDs and the diamines of the PDMS, producing polymer networks at a low curing temperature. This method afforded a nanocomposite with uniform dispersion of QDs even at high QD concentrations (~30 wt%) and superior optical properties compared to a nanocomposite prepared from unmodified QDs and commercial resin. Owing to these enhanced properties, the nanocomposite was used to fabricate a light emitting diode (LED) device, and the luminous efficacy was found to be highest at 1 wt%.

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