Resistive switching in manganese oxide with nonlinear dependence of the local resistivity on the oxygen-vacancy concentration

2017 ◽  
Vol 254 (6) ◽  
pp. 1600698 ◽  
Author(s):  
Irina V. Boylo
Keyword(s):  
Oxygen Vacancy ◽  
Manganese Oxide ◽  
Resistive Switching ◽  
Vacancy Concentration ◽  
Nonlinear Dependence ◽  
Oxygen Vacancy Concentration

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

2015 ◽  
Vol 50 (21) ◽  
pp. 6961-6969 ◽  
Author(s):  
Firman Mangasa Simanjuntak ◽  
Debashis Panda ◽  
Tsung-Ling Tsai ◽  
Chun-An Lin ◽  
Kung-Hwa Wei ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Vacancy Concentration ◽  
Memory Window ◽  
Oxygen Vacancy Concentration ◽  
Switching Devices

Resistive switching properties of epitaxial BaTiO3−δ thin films tuned by after-growth oxygen cooling pressure

2016 ◽  
Vol 18 (1) ◽  
pp. 197-204 ◽  
Author(s):  
Yooun Heo ◽  
Daisuke Kan ◽  
Yuichi Shimakawa ◽  
Jan Seidel
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Vacancy Concentration ◽  
Strong Dependence ◽  
Time Dependent ◽  
Oxygen Vacancy Concentration ◽  
Cooling Conditions

Bias- and time-dependent resistive switching measurements of BaTiO3−δ, i.e. oxygen-deficient barium titanate (BaTiO3) thin films, reveal a strong dependence on the oxygen vacancy concentration, which can be tuned by after-growth oxygen cooling conditions of thin films.

scholarly journals Combined iDPC and EELS analyses for quantifying oxygen vacancy concentration in LSMO

2021 ◽  
Vol 27 (S1) ◽  
pp. 1196-1197
Author(s):  
Aubrey Penn ◽  
Sanaz Koohfar ◽  
Divine Kumah ◽  
James LeBeau
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Concentration ◽  
Oxygen Vacancy Concentration

scholarly journals Effects on Microstructure and Ionic Conductivity of the Co-Doping with Strontium and Samarium of Ceria with Constant Oxygen Vacancy Concentration

Solids ◽  
2021 ◽  
Vol 2 (4) ◽  
pp. 341-370
Author(s):  
Toby Sherwood ◽  
Richard T. Baker
Keyword(s):  
Oxygen Vacancy ◽  
Grain Boundary ◽  
Vacancy Concentration ◽  
Synthesis Method ◽  
Ionic Conductivities ◽  
Solubility Limit ◽  
Material Structure ◽  
Oxygen Vacancy Concentration ◽  
Co Doping ◽  
Phase Pure

Partially substituted cerias are attractive materials for use as electrolytes in intermediate-temperature solid oxide fuel cells (SOFCs). Ceria doped with Sm or Gd has been found to have high ionic conductivities. However, there is interest in whether doping with multiple elements could lead to materials with higher ionic conductivities. The present study looks at the effects of co-doping Sr and Sm in ceria. A compositional series, Ce0.8+xSm0.2−2xSrxO2−δ (with x = 0–0.08), designed to have a constant oxygen vacancy concentration, was successfully prepared using the citrate–nitrate complexation method. A solubility limit of ~5 cation% Sr was found to impact material structure and conductivity. For phase-pure materials, with increasing Sr content, sinterability increased slightly and intrinsic conductivity decreased roughly linearly. The grain boundaries of phase-pure materials showed only a very small blocking effect, linked to the high-purity synthesis method employed, while at high %Sr, they became more blocking due to the presence of a SrCeO3 impurity. Grain capacitances were found to be 50–60 pF and grain boundary capacitances, 5–50 nF. The variation in the bulk capacitance with Sr content was small, and the variation in grain boundary capacitance could be explained by the variation in grain size. Slight deviations at high %Sr were attributed to the SrCeO3 impurity. In summary, in the absence of deleterious effects due to poor microstructure or impurities, such as Si, there is no improvement in conductivity on co-doping with Sr and Sm.

Magnetic State of Ba-Doped Manganites Depending on the Oxygen Vacancy Concentration

2002 ◽  
Vol 233 (2) ◽  
pp. 321-330 ◽  
Author(s):  
S.V. Trukhanov ◽  
N.V. Kasper ◽  
I.O. Troyanchuk ◽  
H. Szymczak ◽  
K. B�rner
Keyword(s):  
Oxygen Vacancy ◽  
Magnetic State ◽  
Vacancy Concentration ◽  
Oxygen Vacancy Concentration ◽  
Doped Manganites

MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Vacancy Concentration ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Oxygen Vacancy Concentration ◽  
Mechanism Study ◽  
Switching Performance ◽  
Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

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