Phonon-assisted tunnel emission of holes from the double donor level of the EL2 defect

2016 ◽  
Vol 253 (10) ◽  
pp. 1916-1922 ◽  
Author(s):  
Tadeusz Wosinski
Keyword(s):  
Donor Level

Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

Donor level in a quasi-two dimensional heterojunction system

1998 ◽  
Vol 109 (2) ◽  
pp. 93-98 ◽  
Author(s):  
S.L. Ban ◽  
J.E. Hasbun
Keyword(s):  
Donor Level ◽  
Two Dimensional

Optical admittance studies of vanadium donor level in high‐resistivityp‐type 6H‐SiC

1996 ◽  
Vol 79 (1) ◽  
pp. 253-258 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Donor Level

Hot phonon-assisted electron resonant tunnelling through a donor level in a quantum well

1998 ◽  
Vol 2 (1-4) ◽  
pp. 191-194
Author(s):  
P Král ◽  
F.W Sheard ◽  
F.F Ouali ◽  
D.N Hill ◽  
A.V Akimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Donor Level ◽  
Resonant Tunnelling

20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source

2004 ◽  
Vol 95 (12) ◽  
pp. 7998-8001 ◽  
Author(s):  
S. Z. Wang ◽  
S. F. Yoon ◽  
Y. X. Xia ◽  
S. W. Xie
Keyword(s):  
Band Gap ◽  
Nitrogen Source ◽  
Donor Level ◽  
Deep Donor ◽  
Deep Donor Level

scholarly journals Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire

2000 ◽  
Vol 5 (S1) ◽  
pp. 754-760
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

Yellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm-3 by spectral CL (T=K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9-1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

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