Inequivalent effect of Dirac valleys on low-energy plasmons in heavily doped graphene

2016 ◽  
Vol 253 (6) ◽  
pp. 1186-1194
Author(s):  
S. Ta Ho ◽  
H. Anh Le ◽  
T. Le ◽  
V. Nam Do
Keyword(s):  
Low Energy ◽  
Doped Graphene ◽  
Heavily Doped

scholarly journals Inequivalent effect of Dirac valleys on low-energy plasmons in heavily doped graphene (Phys. Status Solidi B 6/2016)

2016 ◽  
Vol 253 (6) ◽  
pp. 1232-1232
Author(s):  
S. Ta Ho ◽  
H. Anh Le ◽  
T. Le ◽  
V. Nam Do
Keyword(s):  
Low Energy ◽  
Doped Graphene ◽  
Heavily Doped

scholarly journals Ambipolar Behavior of Ge-Intercalated Graphene: Interfacial Dynamics and Possible Applications

2021 ◽  
Vol 9 ◽  
Author(s):  
A. A. Zakharov
Keyword(s):  
Chemical Potential ◽  
Low Energy ◽  
Energy Electron ◽  
Absolute Amount ◽  
Temperature Hysteresis ◽  
First Order Phase Transition ◽  
Doping Behavior ◽  
Doped Graphene ◽  
Low Energy Electron ◽  
First Order Phase

For the realization of graphene-based electronic and optic devices, the functionalization of this material becomes essential. Graphene doping through intercalation and tuning the chemical potential is one among other promising concepts. Intercalation of germanium is particularly interesting in view of its ambipolar doping behavior. Both p- and n-type doped graphene and their doping levels were identified by x-ray photoelectron emission microscopy (XPEEM), low-energy electron microscopy (LEEM), and angle-resolved photoemission microspectroscopy (μ-ARPES). The absolute amount of intercalated Ge was determined to be roughly 1 ML and 2 MLs for n- and p-phases, respectively. For the samples in the present study, we utilized the transition from 2 ML to 1 ML Ge via a mix phase after a high temperature annealing. Concrete implementation of mutual distribution of p- and n-phases depends on the temperature, mobility of Ge atoms in the second intercalated layer, and cooling/heating protocol, and can be nicely followed live in low-energy electron microscope (LEEM) during heating/cooling below 500°C. The process has a significant temperature hysteresis, which is an indication of the first-order phase transition. The enhanced Ge diffusion in the second layer can be suitable for tailoring ultrashort junction lengths so that pseudo-spin mismatch can be used in future electronic concepts. Another application can utilize the negative relative refractive index at the p–n boundary and can find possible applications in focusing electron optics.

Intrinsic phonon anharmonicity in heavily doped graphene probed by Raman spectroscopy

Carbon ◽  
2021 ◽  
Author(s):  
X. Chen ◽  
M.-L. Lin ◽  
X. Cong ◽  
Y.-C. Leng ◽  
X. Zhang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Doped Graphene ◽  
Heavily Doped

Renormalization of Dirac Cones by Correlation Effects in Heavily-Doped Graphene

2020 ◽  
Vol 76 (1) ◽  
pp. 44-48
Author(s):  
Woo Jong Shin ◽  
Yeongsup Sohn ◽  
Sae Hee Ryu ◽  
Minjae Huh ◽  
Sung Won Jung ◽  
...  
Keyword(s):  
Correlation Effects ◽  
Doped Graphene ◽  
Heavily Doped

Low-energy robust host heavily doped with Dy3+for emission at 1.3 to 1.4 mm

2007 ◽  
Vol 204 (3) ◽  
pp. 839-845 ◽  
Author(s):  
V. K. Tikhomirov ◽  
K. Driesen ◽  
C. Görller-Walrand
Keyword(s):  
Low Energy ◽  
Heavily Doped
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