Role of the changing sign of effective electron-electron correlation energy for information recording in PCM

2015 ◽  
Vol 252 (6) ◽  
pp. 1339-1344
Author(s):  
Nikita Bogoslovskiy ◽  
Konstantin Tsendin
Keyword(s):  
Electron Correlation ◽  
Correlation Energy ◽  
Effective Electron ◽  
Information Recording ◽  
Electron Correlation Energy

Photoluminescence in Nitrogen-Rich a-SiNx:H

1992 ◽  
Vol 258 ◽  
Author(s):  
D. Chen ◽  
J.M. Viner ◽  
P.C. Taylor ◽  
J. Kanicki
Keyword(s):  
Electron Correlation ◽  
Correlation Energy ◽  
Hydrogenated Amorphous Silicon ◽  
Low Energy ◽  
Full Width ◽  
Optical Absorption Edge ◽  
Effective Electron ◽  
Amorphous Silicon Nitride ◽  
Electron Correlation Energy ◽  
Hydrogenated Amorphous

ABSTRACTWe report the measurement of photoluminescence (PL) from nitrogen-rich hydrogenated amorphous silicon nitride (a-SiN1.6:H) films. Excitation at 4.8 eV gives a PL spectrum of approximately Gaussian lineshape centered at 2.9 eV with a full width at half maximum of 1.4 eV. The PL intensity at 2.9 eV fatigues under continuous 4.8 eV excitation, but may be restored by thermal annealing or photobleaching with light of energy ≥ 2 eV. For emission at 2.9 eV, the PL excitation spectrum in the range 3.0 to 5.2 eV follows the a-SiN1.6:H film optical absorption edge at low energy and then decreases with a maximum at approximately 5.4 eV. The PL results are discussed within the framework of a negative effective electron-electron correlation energy (negative Ueff) for the dominant defect (silicon atom bonded to three nitrogen atoms).

Effective Electron Correlation Energy in Amorphous Ge–S

1982 ◽  
Vol 51 (8) ◽  
pp. 2525-2531 ◽  
Author(s):  
Ichiro Watanabe ◽  
Shigeru Shiomi ◽  
Tatsuo Shimizu
Keyword(s):  
Electron Correlation ◽  
Correlation Energy ◽  
Effective Electron ◽  
Electron Correlation Energy
Sign in / Sign up

Export Citation Format

Share Document