Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN

2015 ◽  
Vol 252 (5) ◽  
pp. 1180-1188 ◽  
Author(s):  
E. Gridneva ◽  
E. Richter ◽  
M. Feneberg ◽  
M. Weyers ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Carrier Gas

Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy

2001 ◽  
Vol 188 (1) ◽  
pp. 473-476 ◽  
Author(s):  
V. Kirilyuk ◽  
P.R. Hageman ◽  
P.C.M. Christianen ◽  
W.H.M. Corbeek ◽  
M. Zielinski ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Electronic and structural properties of GaN grown by hydride vapor phase epitaxy

1996 ◽  
Vol 69 (2) ◽  
pp. 242-244 ◽  
Author(s):  
W. Götz ◽  
L. T. Romano ◽  
B. S. Krusor ◽  
N. M. Johnson ◽  
R. J. Molnar
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Electronic And Structural Properties

Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy

1997 ◽  
Vol 6 (10) ◽  
pp. 1532-1535 ◽  
Author(s):  
Yu.V. Melnik ◽  
I.P. Nikitina ◽  
A.E. Nikolaev ◽  
V.A. Dmitriev
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas inm-plane GaN Regrowth by Hydride Vapor Phase Epitaxy

2013 ◽  
Vol 6 (11) ◽  
pp. 115502 ◽  
Author(s):  
Benjamin N. Bryant ◽  
Erin C. Young ◽  
Feng Wu ◽  
Kenji Fujito ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Basal Plane ◽  
Vapor Phase Epitaxy ◽  
Stacking Fault ◽  
Hydride Vapor Phase Epitaxy ◽  
Carrier Gas

Carrier Gas Dependence at Initial Processes fora-Plane AlN Growth onr-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy

2011 ◽  
Vol 50 (5R) ◽  
pp. 055501 ◽  
Author(s):  
Jumpei Tajima ◽  
Chikashi Echizen ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Carrier Gas ◽  
Sapphire Substrates

Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

2014 ◽  
Vol 617 ◽  
pp. 200-206 ◽  
Author(s):  
A.Y. Polyakov ◽  
N.B. Smirnov ◽  
E.B. Yakimov ◽  
A.S. Usikov ◽  
H. Helava ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Carrier Gas Dependence at Initial Processes fora-Plane AlN Growth onr-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy

2011 ◽  
Vol 50 (5) ◽  
pp. 055501 ◽  
Author(s):  
Jumpei Tajima ◽  
Chikashi Echizen ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Carrier Gas ◽  
Sapphire Substrates

Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2and N2

2002 ◽  
Vol 41 (Part 1, No. 1) ◽  
pp. 75-76 ◽  
Author(s):  
Shinya Bohyama ◽  
Kenji Yoshikawa ◽  
Hiroyuki Naoi ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Carrier Gas ◽  
Lateral Overgrowth
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