Effects of valence band tails on the blue and red spectral shifts observed in the temperature-dependent photoluminescence of InN

2013 ◽  
Vol 250 (8) ◽  
pp. 1572-1577 ◽  
Author(s):  
Ian P. Seetoh ◽  
Chew Beng Soh ◽  
Eugene A. Fitzgerald ◽  
Soo Jin Chua
Keyword(s):  
Valence Band ◽  
Temperature Dependent ◽  
Spectral Shifts ◽  
Temperature Dependent Photoluminescence ◽  
Band Tails

scholarly journals Light Emission by Nanoporous GaN Produced by a Top-Down, Nonlithographical Nanopatterning

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
E. Kheirandish ◽  
N. A. Kouklin ◽  
J. Liang
Keyword(s):  
Light Emission ◽  
Electronic Devices ◽  
Emission Spectra ◽  
Temperature Dependent ◽  
Physical Mechanisms ◽  
Spectral Shifts ◽  
Nanopore Arrays ◽  
Bulk Gan ◽  
Pl Emission ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence (PL) spectroscopy is carried out to probe radiative recombination and related light emission processes in two-dimensional periodic close-packed nanopore arrays in gallium nitride (np-GaN). The arrays were produced by nonlithographic nanopatterning of wurtzite GaN followed by a dry etching. The results of Raman spectroscopy point to a small relaxation of the compressive stress of ~0.24 GPa in nanoporous vs. bulk GaN. At ~300 K, the PL emission is induced by excitons and not free-carrier interband radiative recombinations. An evolution of the emission spectra with T is confirmed to be mainly a result of a decay of nonexcitonic PL emission and less of spectral shifts of the underlying PL bands. A switching of excitonic PL regime observed experimentally was analyzed within the exciton recombination-generation framework. The study provides new insights into the behaviors and physical mechanisms regulating light emission processes in np-GaN, critical to the development of nano-opto-electronic devices based on mesoscopic GaN.

scholarly journals Valence-band splitting in orderedGa0.5In0.5P studied by temperature-dependent photoluminescence polarization

1992 ◽  
Vol 45 (12) ◽  
pp. 6637-6642 ◽  
Author(s):  
Takashi Kanata ◽  
Masahiko Nishimoto ◽  
Hiroshi Nakayama ◽  
Taneo Nishino
Keyword(s):  
Valence Band ◽  
Temperature Dependent ◽  
Band Splitting ◽  
Temperature Dependent Photoluminescence ◽  
Valence Band Splitting

Combustion Synthesis and Temperature Dependent Photoluminescence of Nanocrystalline Y2Zr2O7: Eu3+

2009 ◽  
Vol 24 (2) ◽  
pp. 239-242 ◽  
Author(s):  
Dian-Yuan WANG ◽  
Qing-Kai WANG ◽  
Zhang-Yong CHANG ◽  
Yan-Yan GUO ◽  
Xing-Hua WU
Keyword(s):  
Combustion Synthesis ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence from MEH-PPV and MEH-OPPV containing oxadiazole in the main chain

2006 ◽  
Vol 84 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
F. Kong ◽  
X.L. Wu ◽  
G.S. Huang ◽  
R.K. Yuan ◽  
C.Z. Yang ◽  
...  
Keyword(s):  
Main Chain ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

Temperature Dependent Photoluminescence of ZnSe/Alq3 Hybrid Heterostructure

2008 ◽  
Vol 55-57 ◽  
pp. 493-496
Author(s):  
Wisanu Pecharapa ◽  
P. Potirak ◽  
W. Yindeesuk
Keyword(s):  
Electron Beam ◽  
Quantum Efficiency ◽  
Exciton State ◽  
Temperature Dependent ◽  
Pl Spectra ◽  
20 Nm ◽  
Temperature Dependent Photoluminescence

II-VI inorganic/organic heterostructures consisting of ZnSe and tris(8-hydroxyquinoline) aluminum (Alq3) were prepared by electron beam evaporator. Alq3 layer with 20 nm was grown between 200-nm ZnSe layers. Photoluminescence measurement was conducted at various temperatures in order to investigate the important temperature-dependent parameters of this structure. PL spectra revealed thermal population of exciton state and the change in PL quantum efficiency of the film.

Temperature-Dependent Photoluminescence Spectra of PbSe Quantum Dots for Temperature Markers

2012 ◽  
Vol 482-484 ◽  
pp. 2547-2550
Author(s):  
Peng Fei Gu ◽  
Ya Nan Wang ◽  
Jia Jia Cao ◽  
Yu Yan ◽  
Tie Qiang Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Sensitivity ◽  
Peak Position ◽  
Strong Temperature Dependence ◽  
Photoluminescence Spectra ◽  
Temperature Dependent ◽  
Temperature Variations ◽  
Temperature Changes ◽  
Optical Readout ◽  
Temperature Dependent Photoluminescence

We here report the temperature effect on photoluminescence(PL) spectra of PbSe quantum dots (QDs), which exhibit a strong temperature dependence on their spectra position and intensity. They potentially act as the temperature marker, sensing temperature variations and reporting temperature changes remotely through optical readout. In addition, the temperature sensitivity characterized by peak position of PbSe QDs was found to be 0.39nm/°C in a range of 10-100 °C.

Temperature-dependent Photoluminescence of Silicon Nanocrystals Embedded in SiO2 Matrix

2018 ◽  
Vol 34 (4) ◽  
pp. 513-516
Author(s):  
Tianning Zhang ◽  
Kenan Zhang ◽  
Xiren Chen ◽  
Shuxia Wang ◽  
Rongjun Zhang ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Temperature Dependent ◽  
Sio2 Matrix ◽  
Temperature Dependent Photoluminescence
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