Making the semiconductor-metal transition in a growth-dominant phase-change alloy InSb for double density blu-ray super-RENS-ROM disc

2012 ◽  
Vol 249 (10) ◽  
pp. 1992-1998 ◽  
Author(s):  
Bérangère Hyot
Keyword(s):  
Phase Change ◽  
Dominant Phase

Numerical techniques to model conduction dominant phase change systems: A CFD approach and validation with DSC curve

2016 ◽  
Vol 118 ◽  
pp. 240-248 ◽  
Author(s):  
Karthikeyan Kumarasamy ◽  
Jinliang An ◽  
Jinglei Yang ◽  
En-Hua Yang
Keyword(s):  
Phase Change ◽  
Numerical Techniques ◽  
Dominant Phase

Rewritable mutlilevel recording using blue laser and growth-dominant phase-change optical discs

2002 ◽  
Author(s):  
Kunjithapatham Balasubramanian ◽  
Anthony N. Weber ◽  
Michael P. O'Neill ◽  
Michikazu Horie ◽  
Kenjirou Kiyono ◽  
...  
Keyword(s):  
Phase Change ◽  
Blue Laser ◽  
Optical Discs ◽  
Dominant Phase

Rewritable Multilevel Recording by Mark-Size Modulation on Growth-Dominant Phase-Change Material

2001 ◽  
Vol 40 (Part 1, No. 3B) ◽  
pp. 1855-1856 ◽  
Author(s):  
Kenjirou Kiyono ◽  
Michikazu Horie ◽  
Takashi Ohno ◽  
Takuya Uematsu ◽  
Takao Hashizume ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Change Material ◽  
Dominant Phase

Characteristics of Si-Sb-Te Films for Phase Change Memory

2006 ◽  
Vol 918 ◽  
Author(s):  
Jie Feng ◽  
Yin ZHANG ◽  
Baowei Qiao ◽  
Yanfei Cai ◽  
Yinyin Lin ◽  
...  
Keyword(s):  
Phase Separation ◽  
Film Thickness ◽  
Phase Change ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
The Novel ◽  
Thickness Change ◽  
Reset Pulse ◽  
Dominant Phase ◽  
Change Memory

AbstractThe novel phase change materials Si-Sb-Te films were prepared. The crystallization temperature of films increases with the increasing of Si concentration. Phase separation was observed in the Si-Sb-Te films, the dominant phase is Sb2Te3. The melting temperature of Si-Sb-Te decreased to ~550°C lower than 640°C of Ge2Sb2Te5. The decrease of film thickness of Si-Sb-Te films is less than 2% after annealing at 400°C, which is less than ~7% of the film thickness change of Ge2Sb2Te5 film. The crystalline resistivity of Si-Sb-Te films increased and the ratio of amorphous/crystalline resistivity of Si-Sb-Te films increased also comparing with Ge2Sb2Te5 film, which is benefit to reduce the writing current and keep higher on/off ratio of phase change memory. Reversible switch was performed in the devices with Si-Sb-Te films. The device with Si14.3Sb28.6Te57.2 film can be programmed with a 100 ns SET pulse and a 20 ns RESET pulse. The Reset current is only 1.37mA for a 10μm-sized device.

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

Crystallization fractionation technology for paraffin-based phase change materials production

2020 ◽  
pp. 33-38
Author(s):  
S.S. Kruglov (Jr.) ◽  
◽  
G.L. Patashnikov ◽  
S.S. Kruglov (Sr.) ◽  
◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials
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