Layer thickness dependent carrier recombination rate in HVPE GaN

2010 ◽  
Vol 247 (7) ◽  
pp. 1703-1706 ◽  
Author(s):  
Kęstutis Jarašiūnas ◽  
Tadas Malinauskas ◽  
Saulius Nargelas ◽  
Vytautas Gudelis ◽  
Juozas V. Vaitkus ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Recombination Rate ◽  
Carrier Recombination

Few-Layered MoS2 Nanoparticles Loaded TiO2 Nanosheets with Exposed {001} Facets for Enhanced Photocatalytic Activity

NANO ◽  
2018 ◽  
Vol 13 (11) ◽  
pp. 1850129 ◽  
Author(s):  
Chujun Chen ◽  
Xia Xin ◽  
Jinniu Zhang ◽  
Gang Li ◽  
Yafeng Zhang ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Charge Carrier ◽  
Visible Light ◽  
Recombination Rate ◽  
Active Species ◽  
Molar Ratio ◽  
Carrier Recombination ◽  
Tio2 Nanosheets ◽  
Photocatalytic Activities ◽  
Charge Carrier Recombination

To improve the high charge carrier recombination rate and low visible light absorption of {001} facets exposed TiO2 [TiO2(001)] nanosheets, few-layered MoS2 nanoparticles were loaded on the surfaces of TiO2(001) nanosheets by a simple photodeposition method. The photocatalytic activities towards Rhodamine B (RhB) were investigated. The results showed that the MoS2–TiO2(001) nanocomposites exhibited much enhanced photocatalytic activities compared with the pure TiO2(001) nanosheets. At an optimal Mo/Ti molar ratio of 25%, the MoS2–TiO2(001) nanocomposites displayed the highest photocatalytic activity, which took only 30[Formula: see text]min to degrade 50[Formula: see text]mL of RhB (50[Formula: see text]mg/L). The active species in the degradation reaction were determined to be h[Formula: see text] and [Formula: see text]OH according to the free radical trapping experiments. The reduced charge carrier recombination rate, enhanced visible light utilization and increased surface areas contributed to the enhanced photocatalytic performances of the 25% MoS2–TiO2(001) nanocomposites.

A Janus MoSSe monolayer: a potential wide solar-spectrum water-splitting photocatalyst with a low carrier recombination rate

2018 ◽  
Vol 6 (5) ◽  
pp. 2295-2301 ◽  
Author(s):  
Xiangchao Ma ◽  
Xin Wu ◽  
Haoda Wang ◽  
Yucheng Wang
Keyword(s):  
Water Splitting ◽  
Recombination Rate ◽  
Solar Spectrum ◽  
Carrier Recombination

A Janus MoSSe monolayer is theoretically predicted to be a wide solar-spectrum water-splitting photocatalyst with a low carrier recombination rate.

scholarly journals Crystallite size dependent carrier recombination rate and thermal diffusivity in undoped and boron doped CVD diamond layers

2013 ◽  
Vol 210 (10) ◽  
pp. 2022-2027 ◽  
Author(s):  
P. Ščajev ◽  
S. Nargelas ◽  
K. Jarašiūnas ◽  
I. Kisialiou ◽  
E. Ivakin ◽  
...  
Keyword(s):  
Thermal Diffusivity ◽  
Crystallite Size ◽  
Recombination Rate ◽  
Cvd Diamond ◽  
Size Dependent ◽  
Carrier Recombination ◽  
Boron Doped

scholarly journals Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness

AIP Advances ◽  
2013 ◽  
Vol 3 (11) ◽  
pp. 112128 ◽  
Author(s):  
E. Gaubas ◽  
T. Čeponis ◽  
A. Jasiunas ◽  
E. Jelmakas ◽  
S. Juršėnas ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Transient Characteristics ◽  
Carrier Recombination

Carrier recombination rate in GaAs‐AlGaAs single quantum well lasers under high levels of excitation

1990 ◽  
Vol 56 (21) ◽  
pp. 2083-2085 ◽  
Author(s):  
P. Wang ◽  
K. K. Lee ◽  
G. Yao ◽  
Y. C. Chen ◽  
R. G. Waters
Keyword(s):  
Quantum Well ◽  
Recombination Rate ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Carrier Recombination

Photoluminescence measurement of sidewall damage in etched InGaAsP/lnP and GaAs/AIGaAs microstructures

1988 ◽  
Vol 144 ◽  
Author(s):  
P. Grabbe ◽  
A. Scherer ◽  
K. Kash ◽  
R. Bhat ◽  
J. Harbison ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Surface Recombination ◽  
Dry Etching ◽  
Etching Time ◽  
Carrier Recombination ◽  
Damage Depth ◽  
Etching Parameters ◽  
Subsequent Chemical

ABSTRACTWe report the first investigation of the effect of dry etching parameters on the sidewall carrier recombination rate of GaAs/AIGaAs and lnPilnGaAsP microstructures. Surface recombination was measured as a function of ion voltage and etching time. The increase in recombination rate due to etching can be reversed by subsequent chemical removal of the immediate sidewall layer. By monitoring the recovery in recombination rate as a function of the amount of sidewall layer removed, the effective damage depth is inferred.

Sign in / Sign up

Export Citation Format

Share Document