Low-refractive-index materials: A new class of optical thin-film materials

2007 ◽  
Vol 244 (8) ◽  
pp. 3002-3008 ◽  
Author(s):  
E. F. Schubert ◽  
J. K. Kim ◽  
J.-Q. Xi
2015 ◽  
Vol 3 (1) ◽  
Author(s):  
Vahideh Khadem Hosseini ◽  
Mohammad Taghi Ahmadi

Human body detection is very important especially in the countries prone to earthquakes. Fabry-Perot filter as an ideal option in this field needs to be explored. This filter is useful for detection of objects that have temperature around that of the human body. In the presented research, an optical thin film Fabry-Perot filter (FPF) at the wavelength about 8 um to 14 um is investigated. The important factors on transmission spectrum and the band width of filter are discussed. Additionally structural factors such as layers material and their thickness are explored. Various materials with high and low refractive index are examined by TFCalc3.5 for thin film layers. Germanium (Ge) with the refractive index 4.20 is selected for layer with high refractive index and Silicon Dioxide (SiO2) with the refractive index 1.46 is selected for low refractive index layer. Our simulation results lead to optimum parameters as: Germanium layer with 196nm thickness and Silicon Dioxide layer with 451nm thickness. Simulation of proposed filter indicated that the transfer coefficient is more than 90% in desired spectrum. Filter structure can be used on Infrared detectors to improve their resolutions and detection.


2007 ◽  
Vol 1 (3) ◽  
pp. 176-179 ◽  
Author(s):  
J.-Q. Xi ◽  
Martin F. Schubert ◽  
Jong Kyu Kim ◽  
E. Fred Schubert ◽  
Minfeng Chen ◽  
...  

2005 ◽  
Vol 901 ◽  
Author(s):  
Jingqun Xi ◽  
Jong Kyu Kim ◽  
Dexian Ye ◽  
Jasbir S. Juneja ◽  
T.-M. Lu ◽  
...  

AbstractThe refractive index contrast in dielectric multilayer structures, optical resonators and photonic crystals is an important figure of merit, which creates a strong demand for high quality thin films with a very low refractive index. SiO2 nano-rod layers with low refractive indices n = 1.08, the lowest ever reported in thin-film materials, is grown by oblique-angle e-beam deposition of SiO2 with vapor incident angle 85 degree. Scanning electron micrographs reveal a highly porous columnar structure of the low-refractive-index (low-n) film. The gap between the SiO2 nano-rods is ≤50 nm, i.e. much smaller than the wavelength of visible light, and thus sufficiently small to make scattering very small. Optical micrographs of the low-n film deposited on a Si substrate reveal a uniform specular film with no apparent scattering. The unprecedented low index of the SiO2 nano-rod layer is confirmed by both ellipsometry measurements and thin film interference measurements. A single-pair distributed Bragg reflector (DBR) employing the SiO2 nano-rod layer is demonstrated to have enhanced reflectivity, showing the great potential of low-n films for applications in photonic structures and devices.


2013 ◽  
Vol 113 ◽  
pp. 79-84 ◽  
Author(s):  
Sun-Tae Hwang ◽  
Dong Joo You ◽  
Sun Ho Kim ◽  
Sungeun Lee ◽  
Heon-Min Lee

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