Elementary energy bands in the band structure of AIV, AIIIBV crystals and superlattices built upon them

2007 ◽  
Vol 244 (4) ◽  
pp. 1318-1336 ◽  
Author(s):  
D. M. Bercha ◽  
K. E. Glukhov ◽  
M. Sznajder
Keyword(s):  
Band Structure ◽  
Energy Bands

On the need for computing derivatives of energy bands in band structure caclulations

1972 ◽  
Vol 14 (4) ◽  
pp. 485-488 ◽  
Author(s):  
J.-M. André ◽  
J. Delhalle ◽  
G. Kapsomenos ◽  
G. Leroy
Keyword(s):  
Band Structure ◽  
Energy Bands ◽  
Derivatives Of

Energy band structure of Cd3P2 for real D4h15 symmetry I. Energy bands

1979 ◽  
Vol 92 (2) ◽  
pp. 379-387 ◽  
Author(s):  
P. Plenkiewicz ◽  
B. Dowgiałło-Plenkiewicz
Keyword(s):  
Band Structure ◽  
Energy Band ◽  
Energy Band Structure ◽  
Energy Bands

Elementary energy bands in the band structure of the narrow-band-gap semiconductor CdSb

2004 ◽  
Vol 70 (23) ◽  
Author(s):  
D. M. Bercha ◽  
I. V. Slipukhina ◽  
M. Sznajder ◽  
K. Z. Rushchanskii
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Narrow Band ◽  
Energy Bands

The electronic band structure of polydiacetylenes with second- and third-neighbor hopping interaction

2001 ◽  
Vol 79 (4) ◽  
pp. 749-756
Author(s):  
H F Hu ◽  
Y B Li ◽  
K L Yao
Keyword(s):  
Band Structure ◽  
Energy Band ◽  
Energy Gap ◽  
Electronic Band Structure ◽  
Energy Band Structure ◽  
Interaction Parameters ◽  
Energy Bands ◽  
Electronic Band

We have studied the energy band structure of polydiacetylenes (PDAs) using the extensional Hückel Hamiltonian that includes the nonnearest-neighbor hopping interactions. The results show that with increase in the nonnearest-neighbor hopping interaction parameters ρ1 and ρ2, (i) the energy band symmetry is broken and the energy gap 2Δ has changed, (ii) the locations and the widths of energy bands have changed and their shifts depend mainly on ρ1 (next-neighbor hopping interactions), and (iii) the energy gap 2Δ depends mainly on ρ2 (third-neighbor hopping interactions), the effects of the nonnearest-neighbor hopping interaction on the band structure are discussed. PACS No.: 31.15Ct

Optical Properties of Ordered Ge-Si Atomic-Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
T. P. Pearsall ◽  
J. Bevk ◽  
J. C. Bean ◽  
J. M. Bonar ◽  
J. P. Mannaerts
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Atomic Layer ◽  
Electronic Energy ◽  
Optical Transitions ◽  
Energy Bands ◽  
Si Substrates ◽  
Superlattice Structure ◽  
Random Alloy ◽  
Electronic Energy Bands

ABSTRACTA systematic study of the band-to-band optical transitions in commensurate strainedlayer superlattices of Ge and Si grown on (001) Si substrates show the presence of new electronic energy bands. Our measurements suggest that superlattice structure on the same scale as the unit cell results in a band structure significantly different from that of a random alloy.

Low Energy K-Dependent Electronic Structure of the Layered Magnetoresistive Oxide La1.2Sr1.8Mn2O7

1997 ◽  
Vol 494 ◽  
Author(s):  
T. Saitoh ◽  
D. S. Dessau ◽  
C.-H. Park ◽  
Z.-X. Shen ◽  
P. Villella ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Current System ◽  
Coupling Model ◽  
Local Spin Density Approximation ◽  
Energy Bands ◽  
Strong Electron ◽  
Colossal Magnetoresistive ◽  
Band Structure Calculations ◽  
Structure Calculations

ABSTRACTWe have studied the fc-dependent electronic structure of the layered colossal magnetoresistive manganite La1.2Sr1.8Mn2O7 using high-resolution angle-resolved photoemission spectroscopy. We found dispersive energy bands as a function of the crystal momentum k near the Fermi level (EF). We have also performed local spin density approximation (LSDA)+U band-structure calculations on the current system. The overall experimental dispersion relation is basically in agreement with the band-structure calculations yet close to EF there is a significant deviation from the predicted dispersions. Instead of clear Fermi-surface (FS) crossings, we observe a depression of the features as the FS is approached as if there is a “pseudo” gap in the excitation spectrum. The pseudogap continuously opens with temperature and does not show further significant opening above Tc, corresponding to the metal-insulator transition. Those unusual aspects of the spectra has been discussed from the viewpoint of the strong electron-lattice coupling model.

Basics of Crystal Structure and Band Structure

2020 ◽  
pp. 3-28
Author(s):  
Igor Vurgaftman ◽  
Matthew P. Lumb ◽  
Jerry R. Meyer
Keyword(s):  
Crystal Structure ◽  
Band Structure ◽  
Crystal Lattice ◽  
Three Dimensional ◽  
Energy Bands ◽  
Crystalline Structures ◽  
Semiconductor Crystals

III–V semiconductors form crystalline structures with three-dimensional periodic arrangements of the atoms. In this chapter, we will explore the nature of the crystal lattice starting from lower dimensions and progressing to real semiconductor crystals. We also learn why we expect distinct energy bands to form in the solids that crystallize in such lattices. The carrier statistics and occupation of the bands will also be examined.

EFFECTS OF NEXT-NEAREST-NEIGHBOR HOPPING INTERACTION ON THE STRUCTURE OF ELECTRONIC ENERGY BANDS OF POLYDIACETYLENES

1996 ◽  
Vol 10 (19) ◽  
pp. 931-937 ◽  
Author(s):  
H.F. HU ◽  
K.L. YAO
Keyword(s):  
Band Structure ◽  
Electronic State ◽  
Energy Band ◽  
Nearest Neighbor ◽  
Energy Gap ◽  
Electronic Energy ◽  
Energy Band Structure ◽  
Energy Bands ◽  
Extensional Model ◽  
Electronic Energy Bands

Starting from the extensional model Hückel Hamiltonian containing the next-neighbor hopping interactions, the energy band structure and their variation have been studied for polydiacetylenes (PDA’s). With the increase of the next-neighbor hopping interaction parameter ρ the results show that: (1) the electronic state symmetry is broken, (2) the locations and the widths of energy bands have been changed, and (3) the energy gap becomes narrower and the total bandwidth broader. Finally, the effect of the nextneighbor hopping interactions on the band-structure is discussed.

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