Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells

2006 ◽  
Vol 243 (7) ◽  
pp. 1630-1633 ◽  
Author(s):  
M. Tchernycheva ◽  
L. Nevou ◽  
L. Doyennette ◽  
F. H. Julien ◽  
F. Guillot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Theoretical Study ◽  
Strong Electron ◽  
Electron Coupling

scholarly journals Mobility Enhancement in Square Quantum Wells: Symmetric Modulation of the Envelop Wave Function

2010 ◽  
Vol 20 (3) ◽  
pp. 193
Author(s):  
Doan Nhat Quang ◽  
Nguyen Huyen Tung ◽  
Nguyen Trung Hong ◽  
Tran Thi Hai
Keyword(s):  
Experimental Data ◽  
Wave Function ◽  
Low Temperature ◽  
Quantum Wells ◽  
Quantum Transport ◽  
Variational Approach ◽  
Theoretical Study ◽  
Recent Experimental Data ◽  
Carrier Distribution ◽  
Analytic Expressions

We present a theoretical study of the effects from symmetric modulation of the envelop wave function on quantum transport in square quantum wells (QWs). Within the variational approach we obtain analytic expressions for the carrier distribution and their scattering in symmetric two-side doped square QWs. Roughness-induced scattering are found significantly weaker than those in the asymmetric one-side doped counterpart. Thus, we propose symmetric modulation of the wave function as an efficient method for enhancement of the roughness-limited QW mobility. Our theory is able to well reproduce the recent experimental data about low-temperature transport of electrons and holes in two-side doped square QWs, e.g., the mobility dependence on the channel width, which have not been explained so far.

Experimental and theoretical study of scattering mechanisms for 2D excitons in GaAs/AlGaAs quantum wells

1989 ◽  
Vol 32 (12) ◽  
pp. 1771-1775 ◽  
Author(s):  
H. Hillmer ◽  
A. Forchel ◽  
S. Hansmann ◽  
M. Morohashi ◽  
H.P. Meier ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Theoretical Study ◽  
Scattering Mechanisms

A theoretical study of band structure properties for III–V nitrides quantum wells

2011 ◽  
Vol 50 (4) ◽  
pp. 277-288 ◽  
Author(s):  
S. Ben Rejeb ◽  
A. Bhouri ◽  
M. Debbichi ◽  
J.-L. Lazzari ◽  
M. Said
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Theoretical Study ◽  
Structure Properties

scholarly journals Effect of Spontaneous Polarization Charges on the Electron Mobility in ZnO Surface Quantum Wells

2015 ◽  
Vol 19 (4) ◽  
Author(s):  
Nguyen Thanh Tien ◽  
Le Tuan ◽  
Doan Nhat Quang
Keyword(s):  
Surface Roughness ◽  
Low Temperature ◽  
Quantum Wells ◽  
Spontaneous Polarization ◽  
Theoretical Study ◽  
Impurity Scattering ◽  
Hydrogen Ions ◽  
Dimensional Electron ◽  
Surface Roughness Scattering ◽  
Dimensional Electron Gas

We present a theoretical study of the effect due to spontaneous polarization of ZnO on the low-temperature mobility of the two-dimensional electron gas (2DEG) in a ZnO surface quantum well (SFQW). We proved that for the O-polar face this causes an attraction of electrons by the positive charges bound on the surface, while for the Zn-polar face a repulsion of them far away therefrom by the negative bound charges of the same magnitude. Accordingly, surface roughness scattering is drastically enhanced in the former case, but reduced in the latter one. Therefore, the low-% temperature 2DEG mobility in ZnO SFQWs with O-polar face is found to be dominated by surface roughness. Our theory was illustrated for the sample prepared by bombardment of the O-polar face by 100-eV hydrogen ions. The surface roughness scattering enables an explanation of the 2DEG mobility, especially, the reason of low values for the mobility in the dependence from the carrier density which has not been understood when starting from impurity scattering.

scholarly journals Effect from Doping of Quantum Wells on Enhancement of The Mobility Limited by One-Interface Roughness Scattering

2011 ◽  
Vol 21 (3) ◽  
pp. 211
Author(s):  
Tran Thi Hai ◽  
Nguyen Huyen Tung ◽  
Nguyen Trung Hong
Keyword(s):  
Quantum Wells ◽  
Correlation Length ◽  
Variational Approach ◽  
Carrier Density ◽  
Enhancement Factor ◽  
Theoretical Study ◽  
Interface Roughness ◽  
Interface Roughness Scattering

We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility limited by one-interface roughness scattering. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in symmetric two-side doped square QWs to that in the asymmetric one-side counterpart under the same doping and interface profiles. The enhancement is fixed by the sample parameters such as well width, sheet carrier density, and correlation length. So, we propose two-side doping as an efficient way to upgrade the quality of QWs. The two-interface roughness scattering is also incorporated to make comparison.

Strong Electron Coupling of Ru and Vacancy‐Rich Carbon Dots for Synergistically Enhanced Hydrogen Evolution Reaction

Small ◽  
2021 ◽  
pp. 2102496
Author(s):  
Zonglin Liu ◽  
Baoqiang Li ◽  
Yujie Feng ◽  
Dechang Jia ◽  
Caicai Li ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Carbon Dots ◽  
Strong Electron ◽  
Electron Coupling
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