Polaron signatures in the line shape of semiconductor ;intersubband transitions: quantum kinetics of the electron–phonon interaction

2004 ◽  
Vol 241 (11) ◽  
pp. R49-R51 ◽  
Author(s):  
S. Butscher ◽  
J. Förstner ◽  
I. Waldmüller ◽  
A. Knorr
Keyword(s):  
Line Shape ◽  
Intersubband Transitions ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Quantum Kinetics ◽  
Kinetics Of

RANDOM POTENTIAL INFLUENCE ON PHONON RAMAN SCATTERING IN HIGH-TEMPERATURE SUPERCONDUCTORS

1994 ◽  
Vol 08 (24) ◽  
pp. 3371-3388 ◽  
Author(s):  
O.V. MISOCHKO ◽  
E.YA. SHERMAN
Keyword(s):  
High Temperature ◽  
Raman Scattering ◽  
Temperature Dependence ◽  
Line Shape ◽  
Random Potential ◽  
High Temperature Superconductors ◽  
Impurity Scattering ◽  
Potential Influence ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

Raman scattering in high-temperature superconductors is considered, assuming the presence of a random potential caused by either crystal non-stoichiometry or oxygen disorder. The renormalization of the electron-phonon interaction by impurity scattering for phonons of different symmetry has been analyzed. The analysis has been extended so as to take into consideration the finite wavevector phonons. On the basis of the theory developed, unusual properties of phonon Raman scattering in the high-temperature superconductors are qualitatively considered. They include the phonon line-shape and its dependence on the scattering polarizations and resonant conditions, and non-Bose temperature dependence of a number of Raman active phonons.

The simulation of the electron-phonon interaction in silicon

2018 ◽  
Vol 30 (12) ◽  
pp. 3-16
Author(s):  
A. Berezin ◽  
◽  
Yu. Volkov ◽  
M. Markov ◽  
I. Tarakanov ◽  
...  
Keyword(s):  
Phonon Interaction ◽  
Electron Phonon Interaction
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