The effect of pressure on the radiative efficiency of InAs based light emitting diodes

2003 ◽  
Vol 235 (2) ◽  
pp. 312-316 ◽  
Author(s):  
S. A. Choulis ◽  
A. Andreev ◽  
M. Merrick ◽  
S. Jin ◽  
D. G. Clarke ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Radiative Efficiency ◽  
Effect Of Pressure

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

2010 ◽  
Vol 44 (1) ◽  
pp. 123-126 ◽  
Author(s):  
W. V. Lundin ◽  
E. E. Zavarin ◽  
M. A. Sinitsyn ◽  
A. V. Sakharov ◽  
S. O. Usov ◽  
...  
Keyword(s):  
Active Region ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Effect Of Pressure

scholarly journals 3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

AIP Advances ◽  
2016 ◽  
Vol 6 (5) ◽  
pp. 055208 ◽  
Author(s):  
Chi-Kang Li ◽  
Chen-Kuo Wu ◽  
Chung-Cheng Hsu ◽  
Li-Shuo Lu ◽  
Heng Li ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Carrier Transport ◽  
Light Emitting Diodes ◽  
3D Numerical Modeling ◽  
Light Emitting ◽  
Radiative Efficiency

scholarly journals Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

2015 ◽  
Vol 117 (13) ◽  
pp. 134501 ◽  
Author(s):  
Andrew M. Armstrong ◽  
Benjamin N. Bryant ◽  
Mary H. Crawford ◽  
Daniel D. Koleske ◽  
Stephen R. Lee ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Reduction Mechanism ◽  
Defect Reduction ◽  
Light Emitting ◽  
Radiative Efficiency

scholarly journals Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes

2011 ◽  
Author(s):  
Nelson Tansu ◽  
Volkmar Dierolf ◽  
Gensheng Huang ◽  
Samson Penn ◽  
Hongping Zhao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Radiative Efficiency
Sign in / Sign up

Export Citation Format

Share Document