High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures

2003 ◽  
Vol 235 (2) ◽  
pp. 232-237 ◽  
Author(s):  
Ch. Consejo ◽  
L. Konczewicz ◽  
S. Contreras ◽  
B. Jouault ◽  
S. Łepkowsky ◽  
...  
2015 ◽  
Vol 117 (4) ◽  
pp. 045302 ◽  
Author(s):  
Qinglin Wang ◽  
Cailong Liu ◽  
Boheng Ma ◽  
Yang Gao ◽  
Matthew Fitzpatrick ◽  
...  

1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.


Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.


2007 ◽  
Vol 76 (Suppl.A) ◽  
pp. 31-32
Author(s):  
Sergey V. Ovsyannikov ◽  
Vladimir V. Shchennikov ◽  
Alexander N. Titov ◽  
Yoshiya Uwatoko

2007 ◽  
Vol 63 (1) ◽  
pp. 111-117 ◽  
Author(s):  
Roman Gajda ◽  
Andrzej Katrusiak

Ethyl propionate, C5H10O2 (m.p. 199 K), has been in-situ pressure-frozen and its structure determined at 1.34, 1.98 and 2.45 GPa. The crystal structure of the new high-pressure phase (denoted β) is different from phase α obtained by lowering the temperature. The freezing pressure of ethyl propionate at 296 K is 1.03 GPa. The molecule assumes an extended chain s-trans–trans–trans conformation, only slightly distorted from planarity. The closest intermolecular contacts in both phases are formed between carbonyl O and methyl H atoms; however, the ethyl-group H atoms in phase β form no contacts shorter than 2.58 Å. A considerable molecular volume difference of 24.2 Å3 between phases α and β can be rationalized in terms of degrees of freedom of molecules arranged into closely packed structures: the three degrees of freedom allowed for rearrangements of molecules confined to planar sheets in phase α, but are not sufficient for obtaining a densely packed pattern.


1981 ◽  
Vol 46 (4) ◽  
pp. 276-279 ◽  
Author(s):  
C. W. Chu ◽  
S. Z. Huang ◽  
C. H. Lin ◽  
R. L. Meng ◽  
M. K. Wu ◽  
...  

2010 ◽  
Vol 97 (17) ◽  
pp. 174101 ◽  
Author(s):  
Ming Li ◽  
Jie Yang ◽  
Karim Snoussi ◽  
Lixin Li ◽  
Huixin Wang ◽  
...  

2013 ◽  
Vol 250 (4) ◽  
pp. 741-745 ◽  
Author(s):  
Natalia V. Morozova ◽  
Iuliia A. Khmeleva ◽  
Sergey V. Ovsyannikov ◽  
Alexander E. Karkin ◽  
Vladimir V. Shchennikov

1992 ◽  
Vol 46 (1) ◽  
pp. 581-584 ◽  
Author(s):  
Q. Xiong ◽  
J. W. Chu ◽  
Y. Y. Sun ◽  
H. H. Feng ◽  
S. Bud’ko ◽  
...  

2002 ◽  
Vol 22 (1) ◽  
pp. 79-82
Author(s):  
A. Pajzderska ◽  
J. Wasicki ◽  
S. Lewicki ◽  
L. Bobrowicz-Sarga ◽  
I. Natkaniec

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