The Determination of Arsenic Atom Concentration in Arsenic-Doped Silicon by Using HOLZ Analysis

1996 ◽  
Vol 154 (2) ◽  
pp. 531-541 ◽  
Author(s):  
N. Hashikawa ◽  
K. Watanabe ◽  
Y. Kikuchi ◽  
Y. Oshima ◽  
I. Hashimoto
Keyword(s):  
Arsenic Atom ◽  
Atom Concentration ◽  
Doped Silicon

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

scholarly journals The indirect determination of chlorine atom concentration in the troposphere from changes in the patterns of non-methane hydrocarbons

Tellus B ◽  
1997 ◽  
Vol 49 (5) ◽  
pp. 592-601 ◽  
Author(s):  
J. RUDOLPH ◽  
B. RAMACHER ◽  
C. PLASS-DULMER ◽  
K.-P. MULLER ◽  
R. KOPPMANN
Keyword(s):  
Chlorine Atom ◽  
Atom Concentration ◽  
Indirect Determination

S doped silicon quantum dots with high quantum yield as a fluorescent sensor for determination of Fe3+ in water

2020 ◽  
Vol 110 ◽  
pp. 110461
Author(s):  
Xiaoshuo Zhang ◽  
Chunhua Li ◽  
Sheliang Zhao ◽  
Huiyun Pang ◽  
Yong Han ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Yield ◽  
Fluorescent Sensor ◽  
High Quantum Yield ◽  
Silicon Quantum Dots ◽  
High Quantum ◽  
Doped Silicon

TWO ANALYTICAL TECHNIQUES FOR THE DETERMINATION OF THE ABSOLUTE ATOM CONCENTRATION USING ELECTRON ENERGY LOSS SPECTROSCOPY (EELS)

2002 ◽  
Vol 16 (31) ◽  
pp. 4775-4781 ◽  
Author(s):  
N. HADJI
Keyword(s):  
Energy Loss ◽  
Free Electron ◽  
Chemical Elements ◽  
Analytical Techniques ◽  
Electron Model ◽  
Atom Concentration ◽  
Free Electron Model ◽  
The Absolute ◽  
Electron Energy Loss

Two analytical techniques for the determination (within the limits of validity of the free electron model) of the absolute atom concentration (AAC) are reported in details. One of these may be useful for the determination of a AAC for chemical elements (e.g. hydrogen) which are not easy to detect. EELS is used.

scholarly journals Structural determination of niobium-doped silicon clusters by far-infrared spectroscopy and theory

2016 ◽  
Vol 18 (8) ◽  
pp. 6291-6300 ◽  
Author(s):  
Xiaojun Li ◽  
Pieterjan Claes ◽  
Marko Haertelt ◽  
Peter Lievens ◽  
Ewald Janssens ◽  
...  
Keyword(s):  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Far Infrared ◽  
Silicon Cluster ◽  
Silicon Clusters ◽  
Functional Theory ◽  
Infrared Multiple Photon Dissociation ◽  
Niobium Doped ◽  
Doped Silicon

The structures of niobium doped silicon cluster cations are determined by a combination of infrared multiple photon dissociation spectroscopy and density functional theory calculations.

Sign in / Sign up

Export Citation Format

Share Document