Temperature dependence of magnetoresistance in neutron-irradiated and unirradiated high resistivity p-type silicon

1996 ◽  
Vol 153 (2) ◽  
pp. 473-480
Author(s):  
M. Yildirim ◽  
H. Efeo??lu ◽  
B. Abay ◽  
Y. K. Yo??urtçu
Keyword(s):  
Temperature Dependence ◽  
High Resistivity ◽  
Type Silicon ◽  
P Type

scholarly journals High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

2020 ◽  
pp. 16-19
Author(s):  
M. S. Kukurudziak ◽  
O. P. Andreeva ◽  
V. M. Lipka
Keyword(s):  
High Resistance ◽  
High Resistivity ◽  
High Responsivity ◽  
Type Silicon ◽  
Optimal Material ◽  
P Type ◽  
Silicon Based

The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task were established and worked out іn the course of research.

Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4561-4564 ◽  
Author(s):  
L.F. Makarenko ◽  
S.B. Lastovski ◽  
F.P. Korshunov ◽  
L.I. Murin ◽  
M. Moll
Keyword(s):  
High Resistivity ◽  
Cryogenic Temperatures ◽  
Primary Defect ◽  
Type Silicon ◽  
P Type

Temperature dependence of the formation of hydrogen molecules in n- and p-type silicon

1999 ◽  
Vol 273-274 ◽  
pp. 192-195 ◽  
Author(s):  
M. Kitajima ◽  
K. Ishioka ◽  
K. Murakami ◽  
K. Nakanoya ◽  
T. Mori
Keyword(s):  
Temperature Dependence ◽  
Type Silicon ◽  
Hydrogen Molecules ◽  
P Type

scholarly journals Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator

2020 ◽  
Vol 1697 ◽  
pp. 012181
Author(s):  
N V Bazlov ◽  
A M Danishevskii ◽  
A V Derbin ◽  
I S Drachnev ◽  
I M Kotina ◽  
...  
Keyword(s):  
Aluminium Nitride ◽  
High Resistivity ◽  
Type Silicon ◽  
Photoelectric Properties ◽  
P Type ◽  
Mis Structures

Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4561-4564
Author(s):  
L.F. Makarenko ◽  
S.B. Lastovski ◽  
F.P. Korshunov ◽  
L.I. Murin ◽  
M. Moll
Keyword(s):  
High Resistivity ◽  
Cryogenic Temperatures ◽  
Primary Defect ◽  
Type Silicon ◽  
P Type
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