Influence of the lattice component on the thermal conductivity minimum of aluminium

1979 ◽  
Vol 55 (2) ◽  
pp. 631-634 ◽  
Author(s):  
J. Mucha ◽  
J. Rafałowicz
Keyword(s):  
Thermal Conductivity ◽  
Lattice Component

scholarly journals Deviation from Matthiessen's Rule and Lattice Thermal Conductivity of Alloys

1959 ◽  
Vol 12 (2) ◽  
pp. 199 ◽  
Author(s):  
PG Klemens
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Lattice Thermal Conductivity ◽  
Pure Metal ◽  
Liquid Oxygen ◽  
Electronic Thermal Conductivity ◽  
The Difference ◽  
Matthiessen's Rule ◽  
Lattice Component ◽  
The Ideal

The purpose of this note is to point out that the difference in the ideal -electronic thermal conductivity between an alloy and a pure metal can be estimated from the corresponding difference in the ideal electrical resistivity, using the Wiedemann-Franz law. This allows the separation of the thermal conductivity into an electronic and a lattice component to be made with greater confidence, particularly at liquid oxygen temperatures.

Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope

1999 ◽  
Vol 595 ◽  
Author(s):  
D.I. Florescu ◽  
V.A. Asnin ◽  
L.G. Mourokh ◽  
Fred H. Pollak ◽  
R. J. Molnar
Keyword(s):  
Thermal Conductivity ◽  
Vapor Phase ◽  
Room Temperature ◽  
Doping Concentration ◽  
Phonon Scattering ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Electronic Contribution ◽  
Free Electrons ◽  
Lattice Component

AbstractWe have measured the doping concentration dependence of the room temperature thermal conductivity (κ) of two series of n-GaN/sapphire (0001) fabricated by hydride vapor phase epitaxy (HVPE). In both sets n decreased linearly with log n, the variation being about a factor two decrease in κ for every decade increase in n. κ ≈ 1.95 W/cm-K was obtained for one of the most lightly doped samples (n = 6.9×1016 cm−3), higher than the previously reported κ ≈ 1.7-1.8 W/cm-K on lateral epitaxial overgrown material [V.A. Asnin et al, Appl. Phys. Lett. 75, 1240 (1999)] and κ κ 1.3 W/cm-K on a thick HVPE sample [E.K. Sichel and J.I. Pankove, J. Phys. Chem. Solids 38, 330 (1977)]. The decrease in the lattice component of κ due to increased phonon scattering from both the impurities and free electrons outweighs the increase in the electronic contribution to κ.

scholarly journals The Lattice Component of the Thermal Conductivity of Metals and Alloys

1954 ◽  
Vol 7 (1) ◽  
pp. 57 ◽  
Author(s):  
PG Klemens
Keyword(s):  
Thermal Conductivity ◽  
High Temperatures ◽  
Low Temperatures ◽  
Metals And Alloys ◽  
Transverse Lattice ◽  
Conduction Electrons ◽  
Electronic Thermal Conductivity ◽  
Lattice Waves ◽  
Lattice Component

Makinson's (1938) theory of the lattice component of the thermal conductivity of metals and alloys, when limited at low temperatures by interaction with the conduction electrons, is re-examined, and the magnitude of the lattice conductivity is related to the electronic thermal conductivity at low temperatures, thus avoiding uncertainties in the theory at high temperatures. The result depends on whether transverse lattice waves can interact with the electrons.

scholarly journals Doping Dependence Of The Thermal Conductivity Of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using A Scanning Thermal Microscope

2000 ◽  
Vol 5 (S1) ◽  
pp. 336-342 ◽  
Author(s):  
D.I. Florescu ◽  
V.A. Asnin ◽  
L.G. Mourokh ◽  
Fred H. Pollak ◽  
R. J. Molnar
Keyword(s):  
Thermal Conductivity ◽  
Vapor Phase ◽  
Room Temperature ◽  
Doping Concentration ◽  
Phonon Scattering ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Electronic Contribution ◽  
Free Electrons ◽  
Lattice Component

We have measured the doping concentration dependence of the room temperature thermal conductivity (κ) of two series of n-GaN/sapphire (0001) fabricated by hydride vapor phase epitaxy (HVPE). In both sets κ decreased linearly with log n, the variation being about a factor two decrease in κ for every decade increase in n. κ ≈ 1.95 W/cm-K was obtained for one of the most lightly doped samples (n = 6.9×1016 cm−3), higher than the previously reported κ ≈ 1.7-1.8 W/cm-K on lateral epitaxial overgrown material [V.A. Asnin et al, Appl. Phys. Lett. 75, 1240 (1999)] and κ ≈ 1.3 W/cm-K on a thick HVPE sample [E.K. Sichel and J.I. Pankove, J. Phys. Chem. Solids 38, 330 (1977)]. The decrease in the lattice component of κ due to increased phonon scattering from both the impurities and free electrons outweighs the increase in the electronic contribution to κ.

HARDNESS AND THERMAL CONDUCTIVITY OF As-Se-Te CHALCOGENIDE GLASSES

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-931-C4-934 ◽  
Author(s):  
M. F. Kotkata ◽  
M.B. El-den
Keyword(s):  
Thermal Conductivity ◽  
Chalcogenide Glasses

A STUDY OF THE Pb PRECIPITATION IN NaCl FROM THERMAL CONDUCTIVITY EXPERIMENTS

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-893-C6-895
Author(s):  
M. Locatelli ◽  
R. Suchail ◽  
E. Zecchi
Keyword(s):  
Thermal Conductivity
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