Evidence for different absorption tails in the surface depletion layer and in the bulk of n-type GaAs

1978 ◽  
Vol 47 (1) ◽  
pp. K35-K38
Author(s):  
W. Thielemann ◽  
P. Walther ◽  
H. Neumann
Author(s):  
М.В. Лебедев ◽  
Т.В. Львова ◽  
А.Н. Смирнов ◽  
В.Ю. Давыдов

Photoluminescence and Raman spectroscopy are used to study the electronic properties of n-InP(100) surfaces passivated with different sulfide solutions. Such a passivation results in the increase in photoluminescence intensity of the semiconductor evidencing for the reduction in the surface recombination velocity. The increase in the photoluminescence intensity is accompanied by the narrowing of the surface depletion layer, as well as by the increase of the electron density in the probed volume of InP. The efficiency of electronic passivation of the n-InP(100) surface depends on the composition of the sulfide solution.


1981 ◽  
Vol 19 (3) ◽  
pp. 402-405 ◽  
Author(s):  
J. J. Quinn ◽  
Adolfo Eguiluz ◽  
R. F. Wallis ◽  
S. Das Sarma

1981 ◽  
Vol 38 (8) ◽  
pp. 731-733 ◽  
Author(s):  
S. DasSarma ◽  
J.J. Quinn ◽  
A. Eguiluz

2020 ◽  
Vol 504 ◽  
pp. 144409 ◽  
Author(s):  
Saskia Fiedler ◽  
Laurent O. Lee Cheong Lem ◽  
Cuong Ton-That ◽  
Matthew R. Phillips

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