Study of the electron capture coefficient of substitutional neutral boron atoms in silicon at low temperatures

1973 ◽  
Vol 19 (2) ◽  
pp. 397-403 ◽  
Author(s):  
M. Heckmann ◽  
J. Barrau ◽  
M. Pugnet ◽  
M. Brousseau
1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.


1995 ◽  
Vol 51 (20) ◽  
pp. 14147-14151 ◽  
Author(s):  
A. Palma ◽  
J. A. Jiménez-Tejada ◽  
A. Godoy ◽  
J. A. López-Villanueva ◽  
J. E. Carceller

1975 ◽  
Vol 17 (7) ◽  
pp. 787-790 ◽  
Author(s):  
B.O. Sundström ◽  
L. Huldt ◽  
N.G. Nilsson

2004 ◽  
Vol 15 (12) ◽  
pp. 1869-1873 ◽  
Author(s):  
Romulus Mihalca ◽  
Anne J. Kleinnijenhuis ◽  
Liam A. McDonnell ◽  
Albert J. R. Heck ◽  
Ron M. A. Heeren

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