Near-IR detection by PbSGaAs heterojunctions

1973 ◽  
Vol 15 (2) ◽  
pp. 621-627 ◽  
Author(s):  
F. Bernabucci ◽  
G. Margaritondo ◽  
P. Migliorato ◽  
P. Perfetti
Keyword(s):  
Near Ir ◽  
Ir Detection

Multifunctional metallo-supramolecular interlocked hexagonal microstructures for the detection of lead and thiols in water

2018 ◽  
Vol 54 (68) ◽  
pp. 9482-9485 ◽  
Author(s):  
Prabhpreet Singh ◽  
Lalit Singh Mittal ◽  
Kapil Kumar ◽  
Poonam Sharma ◽  
Gaurav Bhargava ◽  
...  
Keyword(s):  
Self Assembly ◽  
Perylene Diimide ◽  
Near Ir ◽  
Ir Detection

We report metallo-supramolecular interlocked hexagonal self-assembly associated with the near-IR detection of Pb2+ ions and thiols in water using a perylene diimide probe.

scholarly journals Active multispectral near-IR detection of small surface targets

2001 ◽  
Author(s):  
Arie N. de Jong ◽  
Hans Winkel ◽  
Marco J. J. Roos
Keyword(s):  
Small Surface ◽  
Near Ir ◽  
Ir Detection

scholarly journals Ultra-broad spectral photo-response in FePS3 air-stable devices

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Maria Ramos ◽  
Felix Carrascoso ◽  
Riccardo Frisenda ◽  
Patricia Gant ◽  
Samuel Mañas-Valero ◽  
...  
Keyword(s):  
Light Exposure ◽  
High Refractive Index ◽  
Ultraviolet Region ◽  
Narrow Gap ◽  
Ambient Conditions ◽  
Near Ir ◽  
Type Semiconductor ◽  
Photo Response ◽  
Ir Detection ◽  
P Type

AbstractVan der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS3 as an appealing narrow-gap p-type semiconductor with an efficient broadband photo-response, a high refractive index, and a remarkable resilience against air and light exposure. To enable fast prototyping, we provide a straightforward guideline to determine the thickness of few-layered FePS3 nanosheets extracted from the optical transmission characteristics of several flakes. The analysis of the electrical photo-response of FePS3 devices as a function of the excitation energy confirms a narrow gap suitable for near IR detection (1.23 eV) and, more interestingly, reveals a broad spectral responsivity up to the ultraviolet region. The experimental estimate for the gap energy is corroborated by ab-initio calculations. An analysis of photocurrent as a function of gate voltage and incident power reveals a photo-response dominated by photogating effects. Finally, aging studies of FePS3 nanosheets under ambient conditions show a limited reactivity of the outermost layers of flakes in long exposures to air.

Simple Near-Infrared Spectrometric Sorption-Based Vapor Sensor

1995 ◽  
Vol 49 (9) ◽  
pp. 1261-1267 ◽  
Author(s):  
Andrew Fong ◽  
Gary M. Hieftje
Keyword(s):  
Fiber Optics ◽  
Silica Gel ◽  
Near Infrared ◽  
Detection Limits ◽  
Polar Compounds ◽  
Quantitative Information ◽  
Absorption Bands ◽  
Near Ir ◽  
Vibrational Overtone ◽  
Ir Detection

A new class of near-IR sensors has been devised which relies on spectroscopic near-IR detection of analytes sorbed on a preconcentrating layer. The new sensors furnish both qualitative and quantitative information by detection of molecular vibrational overtone and combination absorption bands and by measurement of changes in the scattering of the silica-gel medium. A silica-gel thin-layer chromatography (TLC) plate was used as the adsorbent medium. This method is responsive to vapors ranging from water to carbon tetrachloride. Ethyl- and octylderivatized TLC plates were also tested and generally exhibited a weaker response and different spectral features than the original plate. The optical nature of these sensors opens up the possibility of remote analysis by coupling the technique with fiber optics and/or near-IR light-emitting diodes and lasers. Detection limits ranged from 4.1 to 210 ppm by volume. Polar compounds able to hydrogen bond to the surface exhibited lower detection limits than nonpolar compounds.

Near-IR Detection of Polymorphism and Process-Related Substances

1996 ◽  
Vol 68 (6) ◽  
pp. 997-1002 ◽  
Author(s):  
P. K. Aldridge ◽  
C. L. Evans ◽  
H. W. Ward ◽  
S. T. Colgan ◽  
N. Boyer ◽  
...  
Keyword(s):  
Related Substances ◽  
Near Ir ◽  
Ir Detection

Surface Brightness Scale of Galactic Cepheids

1999 ◽  
Vol 190 ◽  
pp. 561-562
Author(s):  
G. P. Di Benedetto
Keyword(s):  
Surface Brightness ◽  
Variable Stars ◽  
Giant Stars ◽  
Near Ir

An accurate calibration of the surface brightness scaleSVas a function of the near-IR color (V–K) has been recently measured for non-variable Galactic dwarf and giant stars. It can be shown that this correlation can be applied to theSVscale of Galactic Cepheid variable stars, which are of major cosmological interest.

Plasmon-assisted interaction of Si with light, for cancer hyperthermia and electromagnetic energy harvest

2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi
Keyword(s):  
Silicon Nanowires ◽  
Metallic Nanoparticles ◽  
Near Infrared ◽  
Optical Transition ◽  
Electromagnetic Energy ◽  
Energy Harvest ◽  
Absorption Enhancement ◽  
Ir Absorption ◽  
Absorption Mechanism ◽  
Near Ir

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.

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