Thermal annealing of X-ray-induced defects in Sr-doped KCl crystals

1972 ◽  
Vol 12 (1) ◽  
pp. 307-315 ◽  
Author(s):  
I. Katz ◽  
B. Chenfoux ◽  
N. Kristianpoller
Keyword(s):  
Thermal Annealing ◽  
X Ray ◽  
Induced Defects

Thermal Annealing of X-Ray-Induced Defects in Sr-Doped KCl Crystals

1972 ◽  
pp. 307-316
Author(s):  
I. Katz ◽  
B. Chenfoux ◽  
N. Kristianpoller
Keyword(s):  
Thermal Annealing ◽  
X Ray ◽  
Induced Defects

X-Ray Characterization of Defects in Irradiated Iron

1990 ◽  
Vol 209 ◽  
Author(s):  
J. Peisl ◽  
H. Franz ◽  
A. Schmalzbauer ◽  
G. Wallner
Keyword(s):  
Thermal Annealing ◽  
Lattice Parameter ◽  
X Rays ◽  
Spatial Correlations ◽  
X Ray ◽  
Single Defect ◽  
Angle Scattering ◽  
Correlation Volume ◽  
Induced Defects ◽  
Irradiation Induced Defects

ABSTRACTWe report on a thorough X-ray study of irradiation induced defects in iron. Single crystals were irradiated at 4.6 K with reactor neutrons and at 90 K with 2 MeV electrons. After irradiation and subsequent thermal annealing, we measured the defect induced diffuse scattering of X-rays (Huang scattering) and the small angle scattering of synchrotron radiation. Simultaneously, lattice parameter and electrical resistivity changes were measured. The single defect properties are determined from low dose electron irradiated samples and yield the lattice distortions, i.e., the volume change and defect symmetry as described by the force dipole tensor. Excellent agreement of the experimental results with calculated values from literature is observed. After neutron irradiation, defects are correlated within displacement cascades. The correlations for vacanciesand interstitials are described by a spatial correlation volume. These results are compared with computer simulations usingthe Marlowe code. During thermal annealing the irradiation induced defects agglomerate at characteristic temperatures and we observe changes in the spatial correlations of the defects. There is a clear difference between electron and neutron irradiated samples concerning defect recovery in stage 1.

In situ X-ray Scattering Study of the Formation of Au Nano Crystals During Thermal Annealing

2007 ◽  
Vol 1027 ◽  
Author(s):  
Do Young Noh ◽  
Ki-Hyun Ryu ◽  
Hyon Chol Kang
Keyword(s):  
Thermal Annealing ◽  
Bragg Reflection ◽  
Ex Situ ◽  
X Ray ◽  
Force Microscopy ◽  
X Ray Scattering ◽  
Atomic Force ◽  
Au Thin Films ◽  
Ray Scattering

AbstractThe transformation of Au thin films grown on sapphire (0001) substrates into nano crystals during thermal annealing was investigated by in situ synchrotron x-ray scattering and ex situ atomic force microscopy (AFM). By monitoring the Au(111) Bragg reflection and the low Q reflectivity and comparing them with ex situ AFM images, we found that polygonal-shape holes were nucleated and grow initially. As the holes grow larger and contact each other, their boundary turns into Au nano crystals. The Au nano crystals have a well-defined (111) flat top surface and facets in the in-plane direction.

Growth and thermal annealing of amorphous germanium carbide obtained by X-ray chemical vapor deposition

2013 ◽  
Vol 48 (18) ◽  
pp. 6357-6366 ◽  
Author(s):  
C. Demaria ◽  
P. Benzi ◽  
A. Arrais ◽  
E. Bottizzo ◽  
P. Antoniotti ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Germanium ◽  
X Ray ◽  
Germanium Carbide

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

Ajustement par recuits rapides RTA (rapid thermal annealing) des contraintes dans des couches minces de tungstène utilisées comme absorbant pour des masques à rayons X

1991 ◽  
Vol 69 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
H. Lafontaine ◽  
J. F. Currie ◽  
S. Boily ◽  
M. Chaker ◽  
H. Pépin
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Power ◽  
X Ray ◽  
Stress Changes ◽  
Different Temperatures ◽  
Absorbing Layer ◽  
Good Agreement ◽  
Sputtering System

Tungsten thin films are deposited with a triode sputtering system in order to obtain an absorbing layer for X-ray masks. The mechanical stress is studied as a function of different pressure and RF power conditions during deposition. Rapid thermal annealing at different temperatures and durations is performed in order to produce films under low compressive stress. We observe that the stress changes occur over the time scale of seconds at the annealing temperature and that the corresponding activation energies are low (60 meV). Grain growth in a preferred orientation explains the observed changes in stress. The magnitude in the change of stress is in good agreement with a model proposed by Hoffman et al. relating the stress to grain size and grain boundary dimensions. [Journal translation]

Emission and X ray diffraction in AlGaAs/ InGaAs Quantum wells with embedded InAs Quantum dots

2013 ◽  
Vol 1617 ◽  
pp. 43-48
Author(s):  
R. Cisneros Tamayo ◽  
I.J. Gerrero Moreno ◽  
A. Vivas Hernandez ◽  
J.L. Casas Espinola ◽  
L. Shcherbyna
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Peak Position ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Prepared State ◽  
Temperature Dependences

ABSTRACTThe photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) have been studied in MBE grown GaAs/AlGaAs/InGaAs/AlGaAs /GaAs quantum wells (QWs) with InAs quantum dots embedded in the center of InGaAs layer in the freshly prepared states and after the thermal treatments during 2 hours at 640 or 710 °C. The structures contained two buffer (Al0.3Ga0.7As/In0.15Ga0.85As) and two capping (In0.15Ga0.85As / Al0.3Ga0.7As) layers. The temperature dependences of PL peak positions have been analyzed in the temperature range 10-500K with the aim to investigate the QD composition and its variation at thermal annealing. The experimental parameters of the temperature variation of PL peak position in the InAs QDs have been compared with the known one for the bulk InAs crystals and the QD composition variation due to Ga/Al/In inter diffusion at thermal treatments has been detected. XRD have been studied with the aim to estimate the capping/buffer layer compositions in the different QW layers in freshly prepared state and after the thermal annealing. The obtained emission and XRD data and their dependences on the thermal treatment have been analyzed and discussed.

Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction

2013 ◽  
Vol 40 (1) ◽  
pp. 0106003
Author(s):  
王健 Wang Jian ◽  
谢自力 Xie Zili ◽  
张韵 Zhang Yun ◽  
滕龙 Teng Long ◽  
李烨操 Li Yecao ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mg Doped

scholarly journals Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3928 ◽  
Author(s):  
Kashif Shahzad ◽  
Kunpeng Jia ◽  
Chao Zhao ◽  
Dahai Wang ◽  
Muhammad Usman ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Reaction ◽  
Ion Irradiation ◽  
Metal Deposition ◽  
Pristine Graphene ◽  
Bombardment Energy ◽  
Induced Defects

The effect of ion-induced defects on graphene was studied to investigate the contact resistance of 40 nm palladium (Pd) contacting on graphene. The defect development was considered and analyzed by irradiating boron (B), carbon (C), nitrogen (N2), and argon (Ar) ions on as-transferred graphene before metallization. The bombardment energy was set at 1.5 keV and ion dose at 1 × 1014 ions/cm2. The defect yields under different ion irradiation conditions were examined by Raman spectroscopy. Although, dissolution process occurs spontaneously upon metal deposition, chemical reaction between metal and graphene is more pronounced at higher temperatures. The rapid thermal annealing (RTA) treatment was performed to improve the Pd/graphene contact after annealing at 450 °C, 500 °C, 550 °C, and 600 °C. The lowest contact resistance of 95.2 Ω-µm was achieved at 550 °C RTA with Ar ion irradiation. We have proved that ion irradiation significantly enhance the Pd/graphene contact instead of pd/pristine graphene contact. Therefore, in view of the contention of results ion induced defects before metallization plus the RTA served an excellent purpose to reduce the contact resistance.

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