Doping dependence of the internal quantum efficiency of spontaneous electron-hole recombination in n-type samples of GaAs excited by a 30 kV electron beam at 300 °K

1971 ◽  
Vol 7 (1) ◽  
pp. 233-238 ◽  
Author(s):  
S. N. Biswas ◽  
S. Rakshit ◽  
A. N. Chakravarti
Keyword(s):  
Electron Beam ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Electron Hole ◽  
Doping Dependence ◽  
Hole Recombination

Theoretical Study on the Anisotropic Photo-Induced Carrier Mobilities in Layered Double Hydroxides-Based Photocatalysts

2021 ◽  
Author(s):  
Zi-Ru Chen ◽  
Yu-Quan Zhu ◽  
Si-Min Xu ◽  
Yufei Zhao ◽  
Qian Peng ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Layered Double Hydroxides ◽  
Reaction Rate ◽  
Theoretical Study ◽  
Electron Hole ◽  
Photocatalysis Reaction ◽  
Double Hydroxides ◽  
Transportation Routes ◽  
Hole Recombination

In order to suppress the unwanted photo-induced electron-hole recombination which restricts the quantum efficiency and reaction rate of photocatalysis reaction, the transportation routes of electron and hole in photocatalyst should...

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

Optically Detected Magnetic Resonance and Double Beam Photoluminescence of CdS/HgS/CdS Nanoparticles

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Cds Nanoparticles ◽  
Electron Hole ◽  
Cladding Layer ◽  
Double Beam ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Cladding Layers ◽  
Hole Recombination

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.

Pre-Industrial Experience in Solar Photocatalytic Mineralization of Real Wastewaters. Application to Pesticide Container Recycling

1999 ◽  
Vol 40 (4-5) ◽  
pp. 123-130 ◽  
Author(s):  
S. Malato ◽  
J. Blanco ◽  
C. Richter ◽  
B. Milow ◽  
M. I. Maldonado
Keyword(s):  
Organic Contaminants ◽  
Toxic Waste ◽  
Experimental Plant ◽  
Electron Hole ◽  
Particulate Suspensions ◽  
Photocatalytic System ◽  
Commercial Pesticide ◽  
Pesticide Container ◽  
By Products ◽  
Hole Recombination

Particulate suspensions of TiO2 irradiated with natural solar tight in a large experimental plant catalyse the oxidation of organic contaminants. The problem in using TiO2 as a photocatalyst is electron/hole recombination. One strategy for inhibiting e−/h+ recombination is to add other (irreversible) electron acceptors to the reaction. In many highly toxic waste waters where degradation of organic pollutants is the major concern, the addition of an inorganic anion to enhance the organic degradation rate may be justified. For better results, these additives should fulfil the following criteria: dissociate into harmless by-products and lead to the formation of ·OH or other oxidising agents. In this paper, we attempt to demonstrate the optimum conditions for the treatment of commercial pesticide rinsates found in the wastewater produced by a pesticide container recycling plant. The experiments were performed in one of the pilot plants of the largest solar photocatalytic system in Europe, the Detoxification Plants of the Plataforma Solar de Almería (PSA), in Spain. After testing ten different commercial pesticides, results show that peroxydisulphate enhances the photocatalytic miniralization of all of them. This study is part of an extensive project focused on the design of a solar photocatalytic plant for decontamination of agricultural rinsates in Almería (Spain).

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