scholarly journals Integrable Quasivertical GaN U‐Shaped Trench‐Gate Metal‐Oxide‐Semiconductor Field‐Effect Transistors for Power and Optoelectronic Integrated Circuits

2020 ◽  
Vol 217 (7) ◽  
pp. 2070026 ◽  
Author(s):  
Zhibo Guo ◽  
Collin Hitchcock ◽  
Robert F. Karlicek ◽  
Guanxi Piao ◽  
Yoshiki Yano ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Optoelectronic Integrated Circuits

scholarly journals A new era of semiconductor genetics using ion-sensitive field-effect transistors: the gene-sensitive integrated cell

2014 ◽  
Vol 372 (2012) ◽  
pp. 20130112 ◽  
Author(s):  
Christofer Toumazou ◽  
Tan Sri Lim Kok Thay ◽  
Pantelis Georgiou
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Consumer Electronics ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Label Free

Semiconductor genetics is now disrupting the field of healthcare owing to the rapid parallelization and scaling of DNA sensing using ion-sensitive field-effect transistors (ISFETs) fabricated using commercial complementary metal -oxide semiconductor technology. The enabling concept of DNA reaction monitoring introduced by Toumazou has made this a reality and we are now seeing relentless scaling with Moore's law ultimately achieving the $100 genome. In this paper, we present the next evolution of this technology through the creation of the gene-sensitive integrated cell (GSIC) for label-free real-time analysis based on ISFETs. This device is derived from the traditional metal-oxide semiconductor field-effect transistor (MOSFET) and has electrical performance identical to that of a MOSFET in a standard semiconductor process, yet is capable of incorporating DNA reaction chemistries for applications in single nucleotide polymorphism microarrays and DNA sequencing. Just as application-specific integrated circuits, which are developed in much the same way, have shaped our consumer electronics industry and modern communications and memory technology, so, too, do GSICs based on a single underlying technology principle have the capacity to transform the life science and healthcare industries.

4H-SiC Trench Metal Oxide Semiconductor Field Effect Transistors with Low On-Resistance

2009 ◽  
Vol 48 (4) ◽  
pp. 04C100 ◽  
Author(s):  
Yuki Nakano ◽  
Toshikazu Mukai ◽  
Ryota Nakamura ◽  
Takashi Nakamura ◽  
Akira Kamisawa
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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