Buckling on Fe‐doped AlGaN/GaN HEMT Films after Laser Lift‐Off Process: Phenomena and Mechanism

2021 ◽  
Author(s):  
Haoyue Hu ◽  
Hongling Xiao ◽  
Fen Guo ◽  
Quan Wang ◽  
Chun Feng ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Lift Off

Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism

2020 ◽  
Vol 35 (9) ◽  
pp. 095024
Author(s):  
Fen Guo ◽  
Quan Wang ◽  
Hongling Xiao ◽  
Lijuan Jiang ◽  
Wei Li ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Gan Hemt ◽  
Lift Off

Dual solar satellites ready for lift-off

Nature ◽  
2006 ◽  
Author(s):  
Geoff Brumfiel
Keyword(s):  
Lift Off

Indian lift-off a let-down

Nature ◽  
2006 ◽  
Author(s):  
Killugudi Jayaraman
Keyword(s):  
Lift Off

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

2011 ◽  
Vol E94-C (7) ◽  
pp. 1193-1198 ◽  
Author(s):  
Akihiro ANDO ◽  
Yoichiro TAKAYAMA ◽  
Tsuyoshi YOSHIDA ◽  
Ryo ISHIKAWA ◽  
Kazuhiko HONJO
Keyword(s):  
Power Amplifier ◽  
Average Power ◽  
Gan Hemt ◽  
Class F

Thermal Laser Stimulation Technique for AlGaN/GaN HEMT Technologies Improvement

2013 ◽  
Author(s):  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Nathalie Labat ◽  
Nathalie Malbert ◽  
Arnaud Curutchet ◽  
...  
Keyword(s):  
Surface States ◽  
Leakage Currents ◽  
Laser Stimulation ◽  
Long Term Stability ◽  
Field Plate ◽  
Gan Hemt ◽  
Die Surface ◽  
Scan Speed ◽  
Stimulation Technique

Abstract To improve the long-term stability of AlGaN/GaN HEMTs, the reduction of gate and drain leakage currents and electrical anomalies at pinch-off is required. As electron transport in these devices is both coupled with traps or surface states interactions and with polarization effects, the identification and localization of the preeminent leakage path is still challenging. This paper demonstrates that thermal laser stimulation (TLS) analysis (OBIRCh, TIVA, XIVA) performed on the die surface are efficient to localize leakage paths in GaN based HEMTs. The first part details specific parameters, such as laser scan speed, scan direction, wavelength, and laser power applied for leakage gate current paths identification. It compares results obtained with Visible_NIR electroluminescence analysis with the ones obtained by the TLS techniques on GaN HEMT structures. The second part describes some failure analysis case studies of AlGaN/GaN HEMT with field plate structure which were successful, thanks to the OBIRCh technique.

Photon Emission Spectral Signatures of AlGaN/GaN HEMT for Functional and Reliability Analysis

2008 ◽  
Author(s):  
Arkadiusz Glowacki ◽  
Christian Boit ◽  
Richard Lossy ◽  
Joachim Würfl
Keyword(s):  
Reliability Analysis ◽  
Gate Voltage ◽  
Near Infrared ◽  
Photon Emission ◽  
Electrical Characterization ◽  
Spectral Signatures ◽  
Operating Modes ◽  
Gan Hemt ◽  
Spectrally Resolved ◽  
Performance Variations

Abstract Non-degraded and degraded AlGaN/GaN HEMT devices have been characterized electrically and investigated in various operating modes using integral and spectrally resolved photon emission (PE). In degraded devices the PE dependence on the gate voltage differs from the non-degraded devices. Various types of dependencies on the gate voltage have been identified when investigating local degradation sites. PE spectroscopy was performed at various bias conditions. For both devices broad spectra have been obtained in a wavelength regime from visible to near-infrared, including local performance variations. Signatures of the degradation have been determined in the electrical characterization, in integral PE distribution and in the PE spectrum.

IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs

2015 ◽  
Author(s):  
Lény Baczkowski ◽  
Franck Vouzelaud ◽  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Jean-Claude Clément ◽  
...  
Keyword(s):  
Fault Location ◽  
Hot Spot ◽  
Life Time ◽  
High Electron Mobility Transistors ◽  
Junction Temperature ◽  
High Electron ◽  
Ir Thermography ◽  
Operating Life ◽  
Gan Hemt ◽  
Electron Mobility Transistors

Abstract This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of this paper, IR thermography is used for the temperature measurement. Results are compared with 3D thermal simulations (ANSYS) to validate the thermal model of an 8x125pm AIGaN/GaN HEMT on SiC substrate. Measurements at different baseplate temperature are also performed to highlight the non-linearity of the thermal properties of materials. Then, correlations between the junction temperature and the life time are also discussed. In the second part, IR thermography is used for hot spot detection. The interest of the system for defect localization on AIGaN/GaN HEMT technology is presented through two case studies: a high temperature operating life test and a temperature humidity bias test.

Ultrascaled AIN/GaN HEMT Technology for mm-wave RT Applications

2011 ◽  
Author(s):  
Huili G. Xing ◽  
Debdeep Jena
Keyword(s):  
Gan Hemt

АКТУАЛЬНЫЕ РАЗРАБОТКИ АО «ПКК МИЛАНДР» В ОБЛАСТИ СВЧ-И СИЛОВЫХ ТРАНЗИСТОРОВ НА ОСНОВЕ ШИРОКОЗОННЫХ ПОЛУПРОВОДНИКОВ

2020 ◽  
Vol 13 (4s) ◽  
pp. 407-410
Author(s):  
Д.В. Колесников ◽  
С.В. Тарасов ◽  
А.Ю. Ткачев
Keyword(s):  
Gan Hemt

Рассмотрен современный уровень развития приборов на основе широкозонных материалов группы А3В5, их преимущества и особенности. Представлены уникальные разработки СВЧ GaN HEMT для широкого диапазона частот, а также силовые транзисторы и их характеристики.

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