Dopant Activation of In Situ Phosphorus‐Doped Silicon Using Multi‐Pulse Nanosecond Laser Annealing

2020 ◽  
Vol 217 (12) ◽  
pp. 1900988
Author(s):  
Hyunsu Shin ◽  
Minhyung Lee ◽  
Eunjung Ko ◽  
Hwa-yoen Ryu ◽  
Seran Park ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Dopant Activation ◽  
Doped Silicon ◽  
Phosphorus Doped

Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films

2001 ◽  
Author(s):  
Seung-Jae Moon ◽  
Minghong Lee ◽  
Costas P. Grigoropoulos
Keyword(s):  
Laser Annealing ◽  
Thermal Emission ◽  
Electrical Conductance ◽  
Nanosecond Laser ◽  
Solidification Velocity ◽  
Emission Measurement ◽  
Excimer Laser Annealing ◽  
In Situ Experiments ◽  
Si Films

Abstract The liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in situ experiments combining time-resolved (∼lns) thermal emission measurements, optical reflectance and transmittance at near-IR wavelengths and electrical conductance measurements. The spontaneous nucleation temperature in the supercooled liquid melt is studied from the thermal emission measurement A new double laser recrystallization technique using a temporally modulated CW Ar+ laser in conjunction with a superposed nanosecond laser pulse produces lateral grain growth at the irradiated spot. The laser melting process is numerically simulated. High-resolution laser flash photography enabled in-situ direct visualization of the resolidification process. The images reveal lateral solidification velocity of about 10 m/s.

Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure

2008 ◽  
Vol 310 (21) ◽  
pp. 4507-4510 ◽  
Author(s):  
Tetsuya Ikuta ◽  
Shigeru Fujita ◽  
Hayato Iwamoto ◽  
Shingo Kadomura ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Selective Epitaxial Growth ◽  
Doped Silicon ◽  
Phosphorus Doped

High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications

2013 ◽  
Vol 50 (9) ◽  
pp. 1007-1011 ◽  
Author(s):  
Z. Ye ◽  
S. Chopra ◽  
R. Lapena ◽  
Y. Kim ◽  
S. Kuppurao
Keyword(s):  
Epitaxial Film ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals Phosphorus-doped silicon nanorod anodes for high power lithium-ion batteries

2017 ◽  
Vol 8 ◽  
pp. 222-228 ◽  
Author(s):  
Chao Yan ◽  
Qianru Liu ◽  
Jianzhi Gao ◽  
Zhibo Yang ◽  
Deyan He
Keyword(s):  
Lithium Ion Batteries ◽  
High Power ◽  
Lithium Ion ◽  
Doped Silicon ◽  
Si Anode ◽  
Phosphorus Doped ◽  
A Current ◽  
Cuo Nanorods ◽  
Better Than

Heavy-phosphorus-doped silicon anodes were fabricated on CuO nanorods for application in high power lithium-ion batteries. Since the conductivity of lithiated CuO is significantly better than that of CuO, after the first discharge, the voltage cut-off window was then set to the range covering only the discharge–charge range of Si. Thus, the CuO core was in situ lithiated and acts merely as the electronic conductor in the following cycles. The Si anode presented herein exhibited a capacity of 990 mAh/g at the rate of 9 A/g after 100 cycles. The anode also presented a stable rate performance even at a current density as high as 20 A/g.

Contact Resistance Improvement for Advanced Logic by Integration of Epi, Implant and Anneal Innovations

MRS Advances ◽  
2019 ◽  
Vol 4 (48) ◽  
pp. 2559-2576
Author(s):  
Fareen Adeni Khaja
Keyword(s):  
Contact Resistance ◽  
Nanosecond Laser ◽  
Dopant Activation ◽  
Cmos Scaling ◽  
Dominant Component ◽  
Plasma Doping ◽  
Recent Trends ◽  
Metastable Alloys ◽  
Laser Anneal

ABSTRACTAs advanced CMOS scaling with FinFETs continues beyond the 10/7nm nodes, contact resistance (Rc) remains a dominant component affecting device performance. The FinFET Source/Drain (S/D) contact area has become smaller with fin pitch scaling, resulting in drastically increased Rc. To achieve higher drive currents and fully realize the performance gain from FinFET architectural changes, it is critical to continue to reduce contact resistivity (ρc) < 1.0x10-9 Ω.cm2 for both NMOS and PMOS. In this paper, we review the recent trends for ρc reduction for advanced CMOS devices and discuss approaches that have demonstrated reduction in ρc, such as in-situ heavily doped epitaxial films for S/D, advanced ion implantation and laser anneals. The implant techniques include pre-amorphization implants (PAI), dopant boosting implants, cryogenic (-100°C) implants for damage engineering and plasma doping (PLAD) for conformal doping of high aspect ratio (HAR) contacts. With such high levels of doping from epi and implants, advanced laser anneals are key for epitaxial regrowth and formation of metastable alloys for dopant supersaturation or segregation in top layers. Millisecond laser anneal (MSA) improves dopant activation and nanosecond laser anneal (NLA) permits superactivation, and both have become key enablers for ρc reduction. This paper also reviews two alternative contact approaches: dual silicide scheme and wrap-around contact (WAC), as potential pathways to further reduce Rc for advanced CMOS nodes.

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