Single‐Crystal Multilayer Nitride, Metal, and Oxide Structures on Engineered Silicon for New‐Generation Radio Frequency Filter Applications

2020 ◽  
Vol 217 (7) ◽  
pp. 1900813 ◽  
Author(s):  
Rytis Dargis ◽  
Andrew Clark ◽  
Azadeh Ansari ◽  
Zhijian Hao ◽  
Mingyo Park ◽  
...  
2018 ◽  
Vol 227 ◽  
pp. 01002
Author(s):  
Wei Li

SiC is modeled as a new generation of semiconductor materials because of its excellent properties. The 6H-SiC is modeled by Materials Studio. The band and state density of 6H-SiC are analyzed. In addition, 6H-SiC Substrate, the AL element doping, from the microscopic mechanism, analyzed the 6H-SiC semiconductor conductivity.


2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Satoru Iizuka ◽  
Takumasa Muraoka

Spherical MgO nanoparticles with a hollow inside, that is, MgO hollow nanospheres, were created in Ar/O2plasma produced by radio frequency (RF) impulse discharge using a Mg rod electrode. The hollow nanospheres were found on the SiO2plates placed near the powered Mg electrode. The electron refraction pattern showed that each nanosphere was made of a single crystal of MgO. Since the shape was spherical, these nanoparticles seemed to be created during the levitation in the plasma without touching any walls. The formation mechanism with a quasiliquid cooling model was also discussed.


2017 ◽  
Vol 65 (11) ◽  
pp. 4502-4512 ◽  
Author(s):  
Peixuan Li ◽  
Xihua Zou ◽  
Wei Pan ◽  
Lianshan Yan ◽  
Shilong Pan

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Seunghun Lee ◽  
Ji Young Kim ◽  
Tae-Woo Lee ◽  
Won-Kyung Kim ◽  
Bum-Su Kim ◽  
...  

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