Evolution and Recovery of Electrical Property of Reactive Sputtered Al‐Doped ZnO Transparent Electrode Exposed to Harsh Environment

2019 ◽  
Vol 217 (3) ◽  
pp. 1900519 ◽  
Author(s):  
Fahmi Machda ◽  
Takaya Ogawa ◽  
Hideyuki Okumura ◽  
Keiichi N. Ishihara
Keyword(s):  
Electrical Property ◽  
Transparent Electrode ◽  
Harsh Environment ◽  
Doped Zno

Characteristics of Al-Doped ZnO Transparent Conductive Oxide Films for Solar Cell Applications

2007 ◽  
Vol 124-126 ◽  
pp. 131-134
Author(s):  
Doo Soo Kim ◽  
Byeong Yun Oh ◽  
Min Chang Jeong ◽  
Jae Min Myoung
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Surface Area ◽  
Dye Sensitized Solar Cells ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Transparent Electrode ◽  
Dye Sensitized ◽  
Doped Zno ◽  
Surface Morphologies

Al-doped ZnO (ZnO:Al) films for transparent electrode applications in dye-sensitized solar cells and thin film solar cells were fabricated and characterized. In order to investigate the effect of crystallinity of the ZnO:Al films to the morphology and optical properties of the etched surface, the ZnO:Al films were deposited with varying substrate temperature by rf magnetron sputtering system and then films’ surface was etched in diluted hydrochloric acid (HCl) solution. Surface morphology of the amorphous ZnO:Al film deposited at room temperature was controllable to have large surface area, but it was not appropriate for transparent electrode layers due to high electrical resistivity. However, the resistivities of the ZnO:Al films deposited at the substrate temperatures of 150 and 300 oC were as low as 1.50×10-3 cm. In addition, the surface morphologies of the films deposited at 150 and 300 oC showed larger surface area for dye-sensitized cells and crater shape for light diffusion through the films, respectively. The surface morphologies and optical properties of the etched ZnO:Al films are attributed to the crystallinity of the as-fabricated films.

The Effects of Cu Dopant on the Microstructure and Non-Ohmic Electrical Properties of ZnO Varistors

2011 ◽  
Vol 343-344 ◽  
pp. 160-165 ◽  
Author(s):  
Ji Wei Fan ◽  
Xiao Peng Li ◽  
Zhen Guo Zhang ◽  
Zhi Qiang Jiao ◽  
Xiang Yang Liu ◽  
...  
Keyword(s):  
Electrical Property ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Growth ◽  
Electrical Characteristics ◽  
Doping Effects ◽  
Zno Varistors ◽  
Doped Zno ◽  
Cu Dopant ◽  
Good Agreement

The doping effects of Cu on the microstructure and non-ohmic electrical properties of ZnO varistors were studied. Addition of Cu2O can enhance the ZnO grain growth during sintering. The SEM and EDS results revealed that the added Cu mainly distributed in the grain boundary and spinel phases of ZnO varistors. The Cu2O addition increased the both of grain and grain boundary resistances. However it decreased the non-ohmic electrical characteristics of ZnO varistors, which is a good agreement with similar findings on Ag2O additions, but contrasts to the reports of good non-ohmic electrical property which found on binary Cu doped ZnO varistors.

A Three-Dimensional Transparent Electrode Structure With Al-Doped ZnO Nanorods

2011 ◽  
Vol 10 (6) ◽  
pp. 1347-1351 ◽  
Author(s):  
Nam-Hyo Kim ◽  
Seung-Ho Jung ◽  
Jong Hwan Park ◽  
Kun-Hong Lee ◽  
Kilwon Cho
Keyword(s):  
Zno Nanorods ◽  
Three Dimensional ◽  
Transparent Electrode ◽  
Electrode Structure ◽  
Doped Zno
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