Effect of In/Zn Ratios on Resistive Switching Behavior of IZO/TiO 2 Thin Film Devices

2019 ◽  
Vol 216 (16) ◽  
pp. 1900018 ◽  
Author(s):  
Fei Shan ◽  
Sung‐Jin Kim
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Thin Film Devices

scholarly journals Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2755
Author(s):  
Tzu-Han Su ◽  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Yu-Chi Chang ◽  
Yeong-Her Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Scanning Electron Microscope Image ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Electron Microscope Image ◽  
Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film

2020 ◽  
Vol 46 (13) ◽  
pp. 21196-21201 ◽  
Author(s):  
Hui-Chuan Liu ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Yan-Ping Jiang ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Nanostructured Tio2 ◽  
Zro2 Thin Film ◽  
Conduction Mechanisms

scholarly journals Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications

2014 ◽  
Vol 9 (1) ◽  
pp. 3 ◽  
Author(s):  
Somnath Mondal ◽  
Jim-Long Her ◽  
Keiichi Koyama ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Memory Applications

Resistive Switching Behavior in Undoped α-Fe2O3 Film with a Low Resistivity

2014 ◽  
Vol 95 ◽  
pp. 96-99
Author(s):  
Yukiko Ogawa ◽  
Yuji Sutou ◽  
Daisuke Ando ◽  
Junichi Koike
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Resistive Switching ◽  
Bottom Electrode ◽  
Impedance Measurement ◽  
Memory Cell ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Current Voltage ◽  
P Type

The resistive switching behavior of a low resistive p-type α-Fe2O3 thin film sandwiched between Fe bottom electrode and top electrodes of various materials (Fe, Ni and TiN) was studied by current-voltage measurements. When TiN was used for top electrode of memory cell, the reversible resistive switching behavior was observed for over 100 cycles. From impedance measurement, it was suggested that the resistive switching behavior in the TiN/p-type α-Fe2O3/Fe device is attributed to the change of the contact resistance in the interface between TiN and α-Fe2O3 layers.

Sign in / Sign up

Export Citation Format

Share Document