scholarly journals Nanoscale Characterization of Active Doping Concentration in Boron-Doped Individual Si Nanocrystals (Phys. Status Solidi A 23∕2018)

2018 ◽  
Vol 215 (23) ◽  
pp. 1870052
Author(s):  
Jie Xu ◽  
Dongke Li ◽  
Deyuan Chen ◽  
Wei Li ◽  
Jun Xu
Keyword(s):  
Doping Concentration ◽  
Boron Doped ◽  
Si Nanocrystals ◽  
Nanoscale Characterization

Nanoscale Characterization of Active Doping Concentration in Boron-Doped Individual Si Nanocrystals

2018 ◽  
Vol 215 (23) ◽  
pp. 1800531 ◽  
Author(s):  
Jie Xu ◽  
Dongke Li ◽  
Deyuan Chen ◽  
Wei Li ◽  
Jun Xu
Keyword(s):  
Doping Concentration ◽  
Boron Doped ◽  
Si Nanocrystals ◽  
Nanoscale Characterization

Mobility characterization of p-type and n-type strained sil-x-yGexcy/Si Epilayer hall devices

1998 ◽  
Vol 535 ◽  
Author(s):  
Jeff J. Petersoa ◽  
Charles E. Hunt ◽  
Stefan F. Zappe ◽  
Ernst Obeneier ◽  
Richard Westhoff ◽  
...  
Keyword(s):  
Doping Level ◽  
Doping Concentration ◽  
Impurity Scattering ◽  
Temperature Range ◽  
Boron Doped ◽  
Ionized Impurity Scattering ◽  
Van Der Pauw ◽  
P Type

AbstractMobilities in Si1-x-yGex Cy layers were measured using mesa etched Van der Pauw structures for alloy layers with 0 < x < 0.30 and 0 < y < 0.02 and doping levels of 1015 < N < 1018 cm-3. Mobilities in Si1-x-yGex Cy layers with x = 0.27 were found to approach Si mobilities for both μn and μp.While electron mobilities in phosphorous-doped SiGeC decrease with doping concentration, hole mobilities in boron-doped SiGeC increase with doping level, indicating ionized impurity scattering is not dominant for μp over the temperature range studied.

Characterization of Heavily Boron-Doped a-Si:H Films Deposited at Low Substrate Temperatures

1987 ◽  
Vol 95 ◽  
Author(s):  
Jin Jang ◽  
Sung Chul Kim ◽  
Dae Bong Lee ◽  
Choochon Lee
Keyword(s):  
Gas Phase ◽  
Doping Concentration ◽  
Electrical And Optical Properties ◽  
Optical Gap ◽  
Boron Doped ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures ◽  
Absorption Tail ◽  
Film Change

AbstractThe electrical and optical properties of heavily boron-doped hydrogenated amorphous silicon (a-Si:H) films deposited at 100°C with a gas phase doping concentration between B2H6/SiH4=0.001 and 0.1 have been investigated. The absorption edge exhibits the characteristic Urbach form and the width of exponential absorption tail, Eo, increases with increasing doping concentration. The optical gap has a linear relationship with the Eo and it is expected to be 2.20 eV when the Eo is zero. Thus, the disorder determines the optical gap directly whether the sample is doped or undoped, the hydrogen and boron in the film change the disorder. The conversion efficiency of n-i-p cell is improved by 15% if the p-layer is deposited at 100°C after preparing the n- and i-layers ∼250°C.

Preparation and characterization of boron-doped corn straw biochar: Fe (Ⅱ) removal equilibrium and kinetics

2021 ◽  
Vol 106 ◽  
pp. 116-123
Author(s):  
Long Sui ◽  
Chunyu Tang ◽  
Qing Du ◽  
Ying Zhao ◽  
Kui Cheng ◽  
...  
Keyword(s):  
Corn Straw ◽  
Boron Doped ◽  
Equilibrium And Kinetics

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC

2017 ◽  
Vol 47 (2) ◽  
pp. 938-943 ◽  
Author(s):  
Yu Yang ◽  
Jianqiu Guo ◽  
Balaji Raghothamachar ◽  
Xiaojun Chan ◽  
Taejin Kim ◽  
...  
Keyword(s):  
Nitrogen Doping ◽  
Doping Concentration
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