Boron Implanted Junction with In Situ Oxide Passivation and Application to p‐PERT Bifacial Silicon Solar Cell

2019 ◽  
Vol 216 (6) ◽  
pp. 1800414 ◽  
Author(s):  
Haibing Huang ◽  
Lichun Wang ◽  
Lisa Mandrell ◽  
Chiara Modanese ◽  
Shenghua Sun ◽  
...  
2016 ◽  
Vol 45 (9) ◽  
pp. 912004
Author(s):  
叶金晶 YE Jin-jing ◽  
周健 ZHOU Jian ◽  
卞洁玉 BIAN Jie-yu ◽  
孙谦晨 SUN Qian-chen

2016 ◽  
Vol 67 (3) ◽  
pp. 231-233 ◽  
Author(s):  
Barbora Mojrová

Abstract This article deals with the investigation of the influence of sintering conditions on the formation process of screen printed contacts on passivated boron doped P+ emitters. The experiment was focused on measuring of resistance changes of two thick film pastes during firing processes with different conditions. Two different temperature profiles were compared at an atmospheric concentration of O2. The influence of the O2 concentration on resistance was investigated for one profile. A rapid thermal processing furnace modified for in-situ resistance measurements was used. The change of resistance was measured simultaneously with the temperature.


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