Impact of the AlN nucleation layer on the variation of the vertical-direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

Yuya Yamaoka; Ken Kakamu; Akinori Ubukata; Yoshiki Yano; Toshiya Tabuchi; Koh Matsumoto; Takashi Egawa

doi:10.1002/pssa.201600843

Impact of the AlN nucleation layer on the variation of the vertical-direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

physica status solidi (a) ◽

10.1002/pssa.201600843 ◽

2017 ◽

Vol 214 (8) ◽

pp. 1600843 ◽

Cited By ~ 5

Author(s):

Yuya Yamaoka ◽

Ken Kakamu ◽

Akinori Ubukata ◽

Yoshiki Yano ◽

Toshiya Tabuchi ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Vertical Direction ◽

High Electron Mobility Transistor ◽

High Electron ◽

Si Substrate ◽

Nucleation Layer ◽

High Electron Mobility

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High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2309 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2309-2311 ◽

Cited By ~ 22

Author(s):

Shuichi Yagi ◽

Mitsuaki Shimizu ◽

Hajime Okumura ◽

Hiromichi Ohashi ◽

Yoshiki Yano ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Gate Insulator ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage

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Group III–V Semiconductor High Electron Mobility Transistor on Si Substrate

Different Types of Field-Effect Transistors - Theory and Applications ◽

10.5772/intechopen.68181 ◽

2017 ◽

Author(s):

Ravindiran Munusami ◽

Shankar Prabhakar

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Group Iii ◽

Group Iii V Semiconductor

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Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation

ECS Meeting Abstracts ◽

10.1149/ma2014-01/41/1518 ◽

2014 ◽

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

Thin Solid Films ◽

10.1016/j.tsf.2020.138128 ◽

2020 ◽

Vol 708 ◽

pp. 138128

Author(s):

R. Lingaparthi ◽

N. Dharmarasu ◽

K. Radhakrishnan ◽

M. Agrawal

Keyword(s):

Electron Mobility ◽

Structural Characteristics ◽

High Electron Mobility Transistor ◽

In Situ Stress ◽

High Electron ◽

Stress Evolution ◽

Si Substrate ◽

High Electron Mobility

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Growth of very-high-mobility AlGaSb∕InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

Applied Physics Letters ◽

10.1063/1.2431567 ◽

2007 ◽

Vol 90 (2) ◽

pp. 023509 ◽

Cited By ~ 18

Author(s):

Y. C. Lin ◽

H. Yamaguchi ◽

E. Y. Chang ◽

Y. C. Hsieh ◽

M. Ueki ◽

...

Keyword(s):

Electron Mobility ◽

High Speed ◽

High Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Si Substrate ◽

Transistor Structure ◽

High Electron Mobility ◽

Very High

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Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2239 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2239-2242 ◽

Cited By ~ 24

Author(s):

Wataru Saito ◽

Yoshiharu Takada ◽

Masahiko Kuraguchi ◽

Kunio Tsuda ◽

Ichiro Omura ◽

...

Keyword(s):

Power Electronics ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Plate Structure ◽

Field Plate ◽

High Breakdown Voltage

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Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

10.1117/12.2076676 ◽

2015 ◽

Author(s):

F. Ren ◽

Y.-H. Hwang ◽

S. J. Pearton ◽

Erin Patrick ◽

Mark E. Law

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.7069 ◽

2008 ◽

Vol 47 (9) ◽

pp. 7069-7072 ◽

Cited By ~ 3

Author(s):

Edward Yi Chang ◽

Jui-Chien Huang ◽

Yueh-Chin Lin ◽

Yen-Chang Hsieh ◽

Chia-Yuan Chang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Buffer Layers ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility

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Analysis of Deep Levels in AlGaN/GaN High Electron Mobility Transistor on Si Substrate Using Capacitance Deep Level Transient Spectroscopy

Advanced Science Engineering and Medicine ◽

10.1166/asem.2013.1396 ◽

2013 ◽

Vol 5 (10) ◽

pp. 1035-1038

Author(s):

M. Charfeddine ◽

M. A. Zaidi ◽

H. Maaref

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

High Electron Mobility Transistor ◽

Deep Levels ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Transient Spectroscopy

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Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation

ECS Transactions ◽

10.1149/06104.0117ecst ◽

2014 ◽

Vol 61 (4) ◽

pp. 117-126

Author(s):

S. Li ◽

Y.-H. Hwang ◽

Y.-L. Hsieh ◽

F. Ren ◽

S. J. Pearton ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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